| Publication Type |
Journal Article |
| School or College |
College of Engineering |
| Department |
Electrical & Computer Engineering; Materials Science & Engineering |
| Creator |
Stringfellow, Gerald B. |
| Other Author |
Lee, S.H.; Fetzer, C.M.; Choi, C.J.; Seong, T.Y. |
| Title |
Step structure and ordering in Zn-doped GaInP |
| Date |
1999 |
| Description |
Presents the results of a study of Zinc dopant effects on both step structure and ordering in GaInP in an effort to further clarify the disordering mechanism. Comparison of the results obtained for Zinc with those reported for tellurium; Experiment; Results; Discussion; Conclusion. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Volume |
86 |
| Issue |
4 |
| First Page |
1982 |
| Last Page |
1987 |
| Subject |
Gallium Compounds; Zinc; Ordering |
| Subject LCSH |
Epitaxy; Metal organic chemical vapor deposition; Order-disorder in alloys |
| Language |
eng |
| Bibliographic Citation |
Lee, S.H., Fetzer, C.M., Stringfellow, G.B., Choi, C.J., & Seong, T.Y. (1999). "Step structure and ordering in Zn-doped GaInP." Journal of Applied Physics, 86(4), 1982-87. |
| Rights Management |
(c)American Institute of Physics. The following article appeared in Lee, S.H., Fetzer, C.M., Stringfellow, G.B., Choi, C.J., & Seong, T.Y. Journal of Applied Physics, 86(4), 1999 |
| Format Medium |
application/pdf |
| Format Extent |
252,345 bytes |
| Identifier |
ir-main,1940 |
| ARK |
ark:/87278/s6q81xqr |
| Setname |
ir_uspace |
| ID |
706728 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6q81xqr |
