Filters: School Or College: "College of Engineering" Department: "Materials Science & Engineering" Collection: "ir_uspace" Format: "application/pdf"
| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 226 |
 |
Stringfellow, Gerald B. | Step structure and ordering in GaInP | Presents information from an experiment on the step structure and ordering in GalnP. Information on the step spacing and degree of order in the epitaxial layers; Details on the experiment; Results from the experiment. | Physics; Ordering; Steps | 1998 |
| 227 |
 |
Stringfellow, Gerald B. | Step structure and ordering in Te-doped GaInP | The step structure and CuPt ordering in GaInP layers grown by organometallic vapor phase epitaxy on singular GaAs substrates have been investigated as a function of Te (DETe) doping using atomic force microscopy, and electrical and optical properties measurements. The degree of order decreases for T... | Surfaces; Te doping; Bandgap energy | 1998 |
| 228 |
 |
Stringfellow, Gerald B. | Step structure and ordering in Zn-doped GaInP | Presents the results of a study of Zinc dopant effects on both step structure and ordering in GaInP in an effort to further clarify the disordering mechanism. Comparison of the results obtained for Zinc with those reported for tellurium; Experiment; Results; Discussion; Conclusion. | Gallium Compounds; Zinc; Ordering | 1999 |
| 229 |
 |
Liu, Feng | Step-induced magnetic-hysteresis anisotropy in ferromagnetic thin films | We investigate the quasistatic magnetic hysteresis of ferromagnetic thin films grown on a vicinal substrate, using Monte Carlo simulations within a two-dimensional XY model. Intrinsic in-plane anisotropy is assigned to surface sites according to their local symmetry. The simulated hysteresis loops s... | Magnetic hysteresis; Ferromagnetic thin films; Step-induced | 2002 |
| 230 |
 |
Liu, Feng | Step-induced optical anisotropy of vicinal Si(001) | It is demonstrated, using reflectance difference spectroscopy, scanning tunneling microscopy, and low-energy electron diffraction, combined with deliberate straining of the surface, that the presence of atomic steps dramatically changes the optical anisotropy of the Si(001) surface. The step-induce... | Step-induced; Optical anisotropy; Vicinal Si(001); Electron diffraction; Atomic steps | 1999-01 |
| 231 |
 |
Liu, Feng | Strain effect on adatom binding and diffusion in homo- and heteroepitaxies of Si and Ge on (001) Surfaces | Strain dependence of adatom binding energies and diffusion barriers in homo- and heteroepitaxies of Si and Ge on s001d surface has been studied using first-principles calculations. In general, Si adatom binding energies and diffusion barriers are larger on Sis001d and Ges001d surfaces than a Ge ada... | Strain effect; Adatom binding; Adatom diffusion; Adatoms; Heteroepitaxies; Homoepitaxies; (001) surfaces; Si; Ge | 2004-10 |
| 232 |
 |
Liu, Feng | Strain-engineered surface transport in Si(001): complete isolation of the surface state via tensile strain | By combining density functional theory, nonequilibrium Green's function formulism and effective- Hamiltonian approaches, we demonstrate strain-engineered surface transport in Si(001), with the complete isolation of the Si surface states from the bulk bands. Our results show that sufficient tensile s... | 2013-01-01 | |
| 233 |
 |
Tiwari, Ashutosh | Stress-induced tuning of metal-insulator transition in NdNiO3 films | We have used the lattice-mismatch epitaxial strain, induced by the constraint of epitaxy, to tune the metal-insulator (M- I) transition temperature of NdNiO3 films grown on Si(100) substrate. Films were integrated with the Si(100) substrate using several combinations of thin buffer layers. A system... | NdNiO3; Silicon substrate; Tantalum nitride; Buffer layers; Biaxial strain | 2002 |
| 234 |
 |
Smith, Grant D.; Bedrov, Dmitro; Borodin, Oleg | Structural relaxation and dynamic hetrogeneity in a polymer melt at attractive surfaces | Molecular dynamics simulations of polymer melts at flat and structured surfaces reveal that, for the former, slow dynamics and increased dynamic heterogeneity for an adsorbed polymer is due to densification of the polymer in a surface layer, while, for the latter, the energy topography of the sur... | Polymer melts; Structural relaxation; Dynamic heterogeneity; Attractive surfaces; Surface energy topography; Polymer densification | 2003-06 |
| 235 |
 |
Tiwari, Ashutosh | Structural, electrical, and optical characterizations of epitaxial Zn(1-x)Ga(x)O films grown on sapphire (0001) substrate | In this paper we report the structural, electrical, and optical properties of epitaxial Zn1−xGaxO films (x=0-0.05) grown on single crystal sapphire (0001) substrate by pulsed laser deposition technique. Structural and elemental analysis was performed using high-resolution x-ray diffraction (θ-2... | Transparent conductive oxides; Gallium | 2007 |
| 236 |
 |
Scarpulla, Michael | Suppression of hole-mediated ferromagnetism in Ga1-xMnxP by hydrogen | We report the passivation of the Mn acceptors in Ga1−xMnxP upon exposure to a hydrogen plasma. The as-grown films are nonmetallic and ferromagnetic with a Curie temperature of TC=55 K. After hydrogenation the sample resistivity increases by approximately three orders of magnitude at room tempera... | Ferromagnetic semiconductors; Hydrogenation | 2008 |
| 237 |
 |
Liu, Feng | Suppression of spin polarization in graphene nanoribbon by edge defects and impurities | We investigate the effect of edge defects (vacancies) and impurities (substitutional dopants) on the robustness of spin polarization in graphene nanoribbons (GNRs) with zigzag edges by using density-functional-theory calculations. The stability of the spin state and its magnetic moments is found to ... | Edge defects; Vacancy; Spin-polarization; Graphene nanoribbon; GNR | 2008-04 |
| 238 |
 |
Liu, Feng | Surface mobility difference between Si and Ge and its effect on growth of SiGe alloy films and islands | Based on first-principles calculations of surface diffusion barriers, we show that on a compressive Ge(001) surface the diffusivity of Ge is 102-103 times higher than that of Si in the temperature range of 300 to 900 K, while on a tensile surface, the two diffusivities are comparable. Consequently, ... | Surface mobility; SiGe film; Strained thin films; Surface diffusion barriers | 2006-01 |
| 239 |
 |
Stringfellow, Gerald B. | Surface photo-absorption studies of the chemical structure of GaInP grown by organometallic vapor phase epitaxy | The surface structure of Ga0.52In0.48P was studied by surface photoabsorption. An absorption peak due to P dimers on Ga0.52In0.48P was observed at 400 nm, shorter than for InP (430 nm). From comparison with results for GaAs and InP, the data are interpreted to indicate that at a tertiarybutylphos... | Absorption peak; Ordering; Substrate orientation | 1995 |
| 240 |
 |
Stringfellow, Gerald B. | Surface photoabsorption study of the effect of V/III ratio on ordering in GaInP | Cu-Pt ordering is widely observed in Ga0.5In0.5P layers grown by organometallic vapor phase epitaxy. The degree of order is a strong function of the input partial pressure of the phosphorus precursor, i.e., the V/III ratio, during growth. By observing the surface structure using in situ surface p... | Degree of order; Photoluminescence; Transmission electron microscopy | 1996 |
| 241 |
 |
Stringfellow, Gerald B. | Surface photoabsorption study of the effect of substrate misorientation on ordering in GaInP | Substrate orientation strongly affects Cu-Pt ordering in Ga0.5In0.5P layers grown by organometallic vapor phase epitaxy. In situ surface photoabsorption SPA measurements were used to measure the concentration of 1 10-oriented P dimers, characteristic of the 2 4 reconstructed surface, as a functio... | P-dimer concentration; Photoluminescence measurements; Surface reconstruction | 1996-04-15 |
| 242 |
 |
Stringfellow, Gerald B. | Surface photoabsorption study of the effects of growth temperature and V/III ratio on ordering in GaInP | Surface photoabsorption (SPA) measurements were used to clarify the Cu-Pt ordering mechanism in Ga0.5In0.5P layers grown by organometallic vapor phase epitaxy. The Cu-Pt ordering is strongly affected by the growth temperature and the input partial pressure of the phosphorus precursor, i.e., the V/II... | P-dimer concentration; Oriented phosphorus dimers; Surface reconstruction | 1996-05-01 |
| 243 |
 |
Stringfellow, Gerald B. | Surface photoabsorption transients and ordering in GaInP | Heterostructures and quantum wells can be produced in GaInP without changing the solid composition by simply varying the order parameter. Since CuPt ordering reduces the band-gap energy, changes in the order parameter induced by changes in growth conditions result in heterostructures with band-ga... | Order parameters; Quantum wells; P-dimers | 1998-03-15 |
| 244 |
 |
Scarpulla, Michael | Surface stoichiometry of pulsed ultraviolet laser treated polycrystalline CdTe | The effects of nanosecond pulsed ultraviolet laser annealing on the surface stoichiometry of close-space sublimated polycrystalline thin films are investigated using angle-resolved x-ray photoemission spectroscopy (XPS). The raw data suggest the formation of a Cd-rich surface layer, but this is coun... | 2014-01-01 | |
| 245 |
 |
Liu, Feng | Surface stress-induced island shape transition in Si(001) homoepitaxy | A low-energy electron microscopy study of two-dimensional Si(001) island shapes near thermal equilibrium on 10315 mm2 large single-domain terraces reveals a continuous increase of island aspect ratio and a shape transition from elliptical to ‘‘American-football''-like with increasing island size... | Si(001); Homoepitaxy; Island shape transition; Single-domain terraces | 2001-11 |
| 246 |
 |
Stringfellow, Gerald B. | Surfactant controlled growth of GaInP by organometallic vapor phase epitaxy | The effect of the surfactant Sb has been studied for GaInP semiconductor alloys grown by organometallic vapor phase epitaxy. Dramatic changes in the optical and electrical properties of GaInP with CuPt ordering have been observed. A small concentration of triethylantimony TESb in the vapor is fou... | Semiconductors; Surface active agents | 2000 |
| 247 |
 |
Stringfellow, Gerald B.; Shurtleff, James Kevin | Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy | Recently, the addition of the isoelectronic surfactant Sb during organometallic vapor phase epitaxy (OMVPE) of GaInP was shown to eliminate ordering, resulting in a significant change in the band gap energy. These results suggest that surfactants added during growth could have profound affects on ot... | Gallium arsenide; Surfactants; Semiconductors | 2001 |
| 248 |
 |
Tiwari, Ashutosh | Synthesis and atomic-level characterization of Ni nanoparticles in Al2O3 matrix | Single domain magnetic nickel nanocrystals were embedded in alumina matrix using a pulsed-laser deposition technique. Structural characterization carried out at the atomic level using scanning transmission electron microscopy with atomic number contrast (STEM-Z) in conjunction with electron energy ... | Nanophase magnetic materials; Alumina | 2002 |
| 249 |
 |
Scarpulla, Michael | Synthesis and optical properties of II-O-VI highly mismatched alloys | We have synthesized ternary and quaternary diluted II-VI oxides using the combination of O ion implantation and pulsed laser melting. CdOxTe12x thin films with x up to 0.015, and the energy gap reduced by 150 meV were formed by O1-implantation in CdTe followed by pulsed laser melting. Quaternary Cd0... | Highly mismatched alloys; Cadmium telluride; Zinc telluride; Thermal annealing; Anticrossing; Photomodulation spectroscopy | 2004 |
| 250 |
 |
Scarpulla, Michael | Synthesis and properties of highly mismatched II-O-I alloys | Ternary and quaternary dilute II-VI oxides were synthesised using a highly nonequilibrium method: the combination of O ion implantation and pulsed-laser melting. CdOxTe12x thin films have been produced with x up to 0.015 and with the energy gap reduced by 0.15 eV. Optical transitions corresponding t... | Highly mismatched alloys; Cadmium telluride; Zinc telluride; Anticrossing | 2004 |