Publication Type |
Journal Article |
School or College |
College of Engineering |
Department |
Materials Science & Engineering |
Creator |
Tiwari, Ashutosh |
Other Author |
Park, M.; Jin, C.; Kumar, D.; Narayan, J. |
Title |
Epitaxial growth of ZnO films on Si(111) |
Date |
2002 |
Description |
In this paper, we report the growth of ZnO films on silicon substrates using a pulsed laser deposition technique. These films were deposited on Si(111) directly as well as by using thin buffer layers of AlN and GaN. All the films were found to have c-axis-preferred orientation aligned with normal to the substrate. Films with AlN and GaN buffer layers were epitaxial with preferred in-plane orientation, while those directly grown on Si(111) were found to have random in-plane orientation. A decrease in the frequency of the E2 (2) Raman mode and a red shift of the band-edge photoluminescence peak due to the presence of tensile strain in the film, was observed. Various possible sources for the observed biaxial strain are discussed. |
Type |
Text |
Publisher |
Materials Research Society |
Volume |
17 |
Issue |
10 |
First Page |
2480 |
Last Page |
2483 |
Subject |
Buffer layers; Aluminum nitride; Silicon substrate; Biaxial strain |
Subject LCSH |
Epitaxy; Metal oxide semiconductors; Zinc oxide; Thin films; Epitaxy; Semiconductor doping |
Language |
eng |
Bibliographic Citation |
Tiwari, A., Park, M., Jin, C., Kumar, D., & Narayan, J. (2002). Epitaxial growth of ZnO films on Si(111). Journal of Materials Research, 17(10), 2480-3. |
Rights Management |
(c) Materials Research Society http://www.mrs.org/ |
Format Medium |
application/pdf |
Format Extent |
133,378 bytes |
Identifier |
ir-main,12086 |
ARK |
ark:/87278/s69g659h |
Setname |
ir_uspace |
ID |
706057 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s69g659h |