Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy

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Publication Type Journal Article
School or College College of Engineering
Department Electrical & Computer Engineering; Materials Science & Engineering
Creator Stringfellow, Gerald B.; Shurtleff, James Kevin
Other Author Jun, S.W.; Fetzer, C.M.; Lee, R.T.
Title Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy
Date 2000
Description The effect of the isoelectronic surfactant Bi on surface structure and ordering has been studied for GaInP semiconductor alloys grown by organometallic vapor-phase epitaxy. A small amount of Bi trimethylbismuth added during growth is found to result in disordering for layers grown using conditions that would otherwise produce highly ordered materials. An order of magnitude increase in the step velocity was observed by atomic-force microscopy. Bi completely eliminates three-dimensional islands on the singular 001 surface.
Type Text
Publisher American Institute of Physics (AIP)
First Page 2716
Last Page 2718
Subject Surfactant; Semiconductors; Trimethylbismuth
Subject LCSH Epitaxy; Metal organic chemical vapor deposition
Language eng
Bibliographic Citation Jun, S.W., Fetzer, C.M., Lee, R.T., Shurtleff, J.K., & Stringfellow, G.B. (2000). "Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy." Appl. Phys. Lett.76(19), 2716-18.
Rights Management (c)American Institute of Physics. The following article appeared in Jun, S.W., Fetzer, C.M., Lee, R.T., Shurtleff, J.K., & Stringfellow, G.B., Applied Physics Letters, 76(19), 2000
Format Medium application/pdf
Format Extent 63,598 Bytes
Identifier ir-main,538
ARK ark:/87278/s6183qpc
Setname ir_uspace
Date Created 2012-06-13
Date Modified 2021-05-06
ID 702954
Reference URL https://collections.lib.utah.edu/ark:/87278/s6183qpc
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