| Publication Type |
Journal Article |
| School or College |
College of Engineering |
| Department |
Electrical & Computer Engineering; Materials Science & Engineering |
| Creator |
Stringfellow, Gerald B.; Shurtleff, James Kevin |
| Other Author |
Jun, S.W.; Fetzer, C.M.; Lee, R.T. |
| Title |
Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy |
| Date |
2000 |
| Description |
The effect of the isoelectronic surfactant Bi on surface structure and ordering has been studied for GaInP semiconductor alloys grown by organometallic vapor-phase epitaxy. A small amount of Bi trimethylbismuth added during growth is found to result in disordering for layers grown using conditions that would otherwise produce highly ordered materials. An order of magnitude increase in the step velocity was observed by atomic-force microscopy. Bi completely eliminates three-dimensional islands on the singular 001 surface. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| First Page |
2716 |
| Last Page |
2718 |
| Subject |
Surfactant; Semiconductors; Trimethylbismuth |
| Subject LCSH |
Epitaxy; Metal organic chemical vapor deposition |
| Language |
eng |
| Bibliographic Citation |
Jun, S.W., Fetzer, C.M., Lee, R.T., Shurtleff, J.K., & Stringfellow, G.B. (2000). "Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy." Appl. Phys. Lett.76(19), 2716-18. |
| Rights Management |
(c)American Institute of Physics. The following article appeared in Jun, S.W., Fetzer, C.M., Lee, R.T., Shurtleff, J.K., & Stringfellow, G.B., Applied Physics Letters, 76(19), 2000 |
| Format Medium |
application/pdf |
| Format Extent |
63,598 Bytes |
| Identifier |
ir-main,538 |
| ARK |
ark:/87278/s6183qpc |
| Setname |
ir_uspace |
| ID |
702954 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6183qpc |
