Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics

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Publication Type journal article
School or College College of Engineering
Department Electrical & Computer Engineering
Creator Rieth, Loren W
Other Author Xie, Xianzong; Merugu, Srinivas; Tathireddy, Prashant; Solzbacher, Florian
Title Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
Date 2012-01-01
Description Encapsulation of biomedical implants with complex three dimensional geometries is one of the greatest challenges achieving long-term functionality and stability. This report presents an encapsulation scheme that combines Al2O3 by atomic layer deposition with parylene C for implantable electronic systems. The Al2O3-parylene C bi-layer was used to encapsulate interdigitated electrodes, which were tested in vitro by soak testing in phosphate buffered saline solution at body temperature (37 °C) and elevated temperatures (57 °C and 67 °C) for accelerated lifetime testing up to 5 months. Leakage current and electrochemical impedance spectroscopy were measured for evaluating the integrity and insulation performance of the coating. Leakage current was stably about 15 pA at 5 V dc, and impedance was constantly about 3.5 MX at 1 kHz by using electrochemical impedance spectroscopy for samples under 67 °C about 5 months (approximately equivalent to 40 months at 37 °C). Alumina and parylene coating lasted at least 3 times longer than parylene coated samples tested at 80 °C. The excellent insulation performance of the encapsulation shows its potential usefulness for chronic implants.
Type Text
Publisher American Institute of Physics (AIP)
Volume 101
Issue 9
First Page 093702
Dissertation Institution University of Utah
Language eng
Bibliographic Citation Xie, X., Rieth, L., Merugu, S., Tathireddy, P., & Solzbacher, F. (2012). Plasma-assisted atomic layer deposition of Al 2O 3 and parylene C bi-layer encapsulation for chronic implantable electronics. Applied Physics Letters, 101(9), 093702.
Rights Management (c)American Institute of Physics. The following article appeared in Xie, X., Rieth, L., Merugu, S., Tathireddy, P., & Solzbacher, F. (2012). Plasma-assisted atomic layer deposition of Al 2O 3 and parylene C bi-layer encapsulation for chronic implantable electronics. Applied Physics Letters, 101(9), 093702 2010. and may be found at http://dx.doi.org/10.1063/1.4748322.
Format Medium application/pdf
Format Extent 964,780 bytes
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Reference URL https://collections.lib.utah.edu/ark:/87278/s6f486xj
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