Publication Type |
journal article |
School or College |
College of Engineering |
Department |
Electrical & Computer Engineering |
Creator |
Rieth, Loren W |
Other Author |
Xie, Xianzong; Merugu, Srinivas; Tathireddy, Prashant; Solzbacher, Florian |
Title |
Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics |
Date |
2012-01-01 |
Description |
Encapsulation of biomedical implants with complex three dimensional geometries is one of the greatest challenges achieving long-term functionality and stability. This report presents an encapsulation scheme that combines Al2O3 by atomic layer deposition with parylene C for implantable electronic systems. The Al2O3-parylene C bi-layer was used to encapsulate interdigitated electrodes, which were tested in vitro by soak testing in phosphate buffered saline solution at body temperature (37 °C) and elevated temperatures (57 °C and 67 °C) for accelerated lifetime testing up to 5 months. Leakage current and electrochemical impedance spectroscopy were measured for evaluating the integrity and insulation performance of the coating. Leakage current was stably about 15 pA at 5 V dc, and impedance was constantly about 3.5 MX at 1 kHz by using electrochemical impedance spectroscopy for samples under 67 °C about 5 months (approximately equivalent to 40 months at 37 °C). Alumina and parylene coating lasted at least 3 times longer than parylene coated samples tested at 80 °C. The excellent insulation performance of the encapsulation shows its potential usefulness for chronic implants. |
Type |
Text |
Publisher |
American Institute of Physics (AIP) |
Volume |
101 |
Issue |
9 |
First Page |
093702 |
Dissertation Institution |
University of Utah |
Language |
eng |
Bibliographic Citation |
Xie, X., Rieth, L., Merugu, S., Tathireddy, P., & Solzbacher, F. (2012). Plasma-assisted atomic layer deposition of Al 2O 3 and parylene C bi-layer encapsulation for chronic implantable electronics. Applied Physics Letters, 101(9), 093702. |
Rights Management |
(c)American Institute of Physics. The following article appeared in Xie, X., Rieth, L., Merugu, S., Tathireddy, P., & Solzbacher, F. (2012). Plasma-assisted atomic layer deposition of Al 2O 3 and parylene C bi-layer encapsulation for chronic implantable electronics. Applied Physics Letters, 101(9), 093702 2010. and may be found at http://dx.doi.org/10.1063/1.4748322. |
Format Medium |
application/pdf |
Format Extent |
964,780 bytes |
Identifier |
uspace,17912 |
ARK |
ark:/87278/s6f486xj |
Setname |
ir_uspace |
ID |
708171 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6f486xj |