Publication Type |
Journal Article |
School or College |
College of Engineering |
Department |
Materials Science & Engineering |
Creator |
Liu, Feng |
Other Author |
Huang, L.; Gong, X. G. |
Title |
Strain effect on adatom binding and diffusion in homo- and heteroepitaxies of Si and Ge on (001) Surfaces |
Date |
2004-10 |
Description |
Strain dependence of adatom binding energies and diffusion barriers in homo- and heteroepitaxies of Si and Ge on s001d surface has been studied using first-principles calculations. In general, Si adatom binding energies and diffusion barriers are larger on Sis001d and Ges001d surfaces than a Ge adatom, in accordance with decreasing bond strength from Si-Si to Si-Ge and to a Ge-Ge bond. The overall surface diffusion anisotropy of Si and Ge adatoms is found to be comparable on both Sis001d and Ges001d. The essentially linear dependence of binding energies and diffusion barriers on external strain is reproduced in all the cases, giving strong evidence for a priori quantitative prediction of the effect of external strain on adatom binding and surface diffusion. |
Type |
Text |
Publisher |
American Physical Society |
Journal Title |
Physical Review B |
Volume |
70 |
Issue |
15 |
DOI |
10.1103/PhysRevB.70.155320 |
citatation_issn |
1098-0121 |
Subject |
Strain effect; Adatom binding; Adatom diffusion; Adatoms; Heteroepitaxies; Homoepitaxies; (001) surfaces; Si; Ge |
Subject LCSH |
Strain theory (Chemistry); Epitaxy |
Language |
eng |
Bibliographic Citation |
Huang, L., Liu, F., & Gong, X. G. (2004). Strain effect on adatom binding and diffusion in homo- and heteroepitaxies of Si and Ge on (001) Surfaces. Physical Review B, 70(15), 155320. |
Rights Management |
(c) American Physical Society http://dx.doi.org/10.1103/PhysRevB.70.155320 |
Format Medium |
application/pdf |
Format Extent |
146,754 bytes |
Identifier |
ir-main,12168 |
ARK |
ark:/87278/s6w09q88 |
Setname |
ir_uspace |
ID |
704777 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6w09q88 |