| Publication Type |
Journal Article |
| School or College |
College of Science |
| Department |
Physics |
| Creator |
Williams, Clayton C.; Stringfellow, Gerald B. |
| Other Author |
Su, L. C.; Ho, I .H.; Leng, Y. |
| Title |
Effect of substrate misorientation on ordering in Ga0.5In0.5P |
| Date |
1994 |
| Description |
Ordering produced in Gao.5Ino.5P epitaxial layers grown by OMVPE can be controlled by variations in the substrate misorientation as well as the growth temperature and the growth rate. The ordering produced at a growth temperature of 620°C and a relatively low growth rate of 0.5 /μm/hr is found to depend strongly on both the direction and angle of substrate misorientation. |
| Type |
Text |
| Publisher |
Materials Research Society |
| First Page |
123 |
| Last Page |
128 |
| Subject |
Ga0.5In0.5P; Epitaxial layers; Epitaxial growth; OMVPE |
| Subject LCSH |
Epitaxy; Metal organic chemical vapor deposition |
| Language |
eng |
| Bibliographic Citation |
Su, L. C., Ho, I. H., Stringfellow, G. B., Leng, Y., & Williams, C. C. (1994). Effect of substrate misorientation on ordering in Ga0.5In0.5P. Materials Research Society Symposium - Proceedings, 340, 123-8. |
| Rights Management |
(c) Materials Research Society http://www.mrs.org/ |
| Format Medium |
application/pdf |
| Format Extent |
2,395,644 bytes |
| Identifier |
ir-main,8576 |
| ARK |
ark:/87278/s6hh73bq |
| Setname |
ir_uspace |
| ID |
703867 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6hh73bq |
