| Publication Type |
journal article |
| School or College |
College of Science |
| Department |
Physics |
| Creator |
Vardeny, Zeev Valentine |
| Other Author |
Tauc, J.; Fang, C. J. |
| Title |
Optical picosecond studies of carrier thermalization in amorphous silicon |
| Date |
1981 |
| Description |
Thermalization of photogenerated hot carriers in a-Si, a-Si:H and a-Si:H:F was studied using the pump and probe method with subpicosecond resolution. The process is optically observable because the absorption cross-section of the hot carriers depends on their excess energy. It was found that the energy dissipation rate to phonons is the maximum possible in a-Si while in a-Si:H it is slower and can be described by Frohlich interaction with polar phonons. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Volume |
73 |
| First Page |
243 |
| Last Page |
247 |
| DOI |
10.1063/1.33038 |
| citatation_issn |
0094243X |
| Subject |
Carrier thermalization; Amorphous silicon; Frohlich interaction |
| Subject LCSH |
Picosecond pulses; Hot carriers; Amorphous semiconductors -- Optical properties |
| Language |
eng |
| Conference Title |
AIP Conference Proceedings Volume 73 |
| Bibliographic Citation |
Vardeny, Z. V., Tauc, J., & Fang, C. J. (1981). Optical picosecond studies of carrier thermalization in amorphous silicon. AIP Conference Proceedings, 73, 243-7. |
| Rights Management |
©American Institute of Physics. The following article appeared in Vardeny, Z. V., Tauc, J., & Fang, C. J., AIP Conference Proceedings, 73, 1981 and may be found at http://dx.doi.org/10.1063/1.33038 |
| Format Medium |
application/pdf |
| Format Extent |
1,192,336 bytes |
| Identifier |
ir-main,9559 |
| ARK |
ark:/87278/s6d51563 |
| Setname |
ir_uspace |
| ID |
703775 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6d51563 |
