Publication Type |
Journal Article |
School or College |
College of Science |
Department |
Physics |
Creator |
Vardeny, Zeev Valentine |
Other Author |
Pfost, D.; Tauc, J. |
Title |
Optical bias control of dispersive relaxations in α-Si:H |
Date |
1984-01 |
Description |
Relaxation of the photoinduced ir absorption band in α-Si:H was studied in the microsecond time domain as a function of cw bias illumination. The decays follow a power law t-α where the dispersion parameter a increases with bias illumination. At low temperatures, a increases linearly with the steady-state carrier density while at high temperatures it saturates at high illumination levels. These results are interpreted as evidence for the bias-controlled tunneling process at low temperatures and multiple trapping process with tail states under the saturation condition at high temperatures. |
Type |
Text |
Publisher |
American Physical Society |
Journal Title |
Physical Review Letters |
Volume |
52 |
Issue |
5 |
First Page |
376 |
Last Page |
379 |
DOI |
10.1103/PhysRevLett.52.376 |
citatation_issn |
0031-9007 |
Subject |
Optical bias control; Dispersive relaxations; a-Si:H; Amorphous silicon |
Subject LCSH |
Amorphous semiconductors |
Language |
eng |
Bibliographic Citation |
Vardeny, Z. V., Pfost, D., & Tauc, J. (1985). Optical bias control of dispersive relaxations in α-Si:H. Physical Review Letters, 52(5), 376-9. |
Rights Management |
(c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.52.376 |
Format Medium |
application/pdf |
Format Extent |
353,539 bytes |
Identifier |
ir-main,9602 |
ARK |
ark:/87278/s61269vq |
Setname |
ir_uspace |
ID |
703573 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s61269vq |