Effects of surfactants Sb and Bi on the incorporation of zinc and carbon in III/V materials grown by organometallic vapor-phase epitaxy

The incorporation of both dopants and background impurities during the organometallic vapor phase epitaxial _x0002_OMVPE_x0003_ growth of GaAs, GaInP, and GaP has been significantly altered by the use of the surfactants Sb and Bi. Sb and Bi are isoelectronic with the group V host elements, and so produce no independent doping. This paper demonstrates that the incorporation of Zn can be increased by an order of magnitude in GaP to a value of approximately 1020 cm−3, the highest value reported to date. Additionally, these same surfactants lead to significant decreases in carbon contamination during growth. At high growth temperatures the reduction can be as large as 100_x0002_ in GaP. The surfactants also result in marked decreases in autodoping due to S and Si from the substrate. A marker that may help identify the mechanism for these effects is H incorporation. Both Sb and Bi surfactants give rise to increased concentrations of H in the GaP layers. Similar effects are observed in GaInP. However, in GaAs, no H is detected in the layers. One possible explanation for these phenomena is that Sb or Bi increases the surface H concentration. The increased H would have two possible effects on the incorporation of dopants and impurities. _x0002_1_x0003_ Passivation of the Zn acceptor by formation of a neutral Zn-H complex would lead to increased incorporation for thermodynamic reasons. _x0002_2_x0003_ Allowing increased desorption of C, S, and Si from the surface by increased formation of volatile hydrides leads to decreased incorporation levels. These results suggest a simple and effective method of controlling the incorporation of dopant and impurity atoms by adding a minute amount of surfactant during OMVPE growth.