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Creator | Title | Description | Subject | Date |
126 |
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Liu, Feng | Nanostressors and the nanomechanical response of a thin silicon film on an insulator | Pseudomorphic three-dimensional Ge nanocrystals (quantum dots) grown on thin silicon-on-insulator substrates can induce significant bending of the silicon template layer that is local on the nanometer scale. We use molecular dynamics simulations and analytical models to confirm the local bending of... | Nanostressors; Nanomechanical response; Thin silicon film | 2002-09 |
127 |
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Liu, Feng | Self-assembly of three-dimensional metal islands: nonstrained versus strained islands | A theoretical model for the Volmer-Weber growth of three-dimensional metal islands is proposed, with a dipolar island edge-edge interaction. The existence of such an island edge effect makes the island shape dependent on island size. Furthermore, it induces a stable island size against coarsening, l... | Self-assembly; Three dimensional islands; Metal islands; Nonstrained islands; Strained islands; Volmer-Weber growth | 2002-11 |
128 |
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Tiwari, Ashutosh | Epitaxial growth of magnetic nickel nanodots by pulsed laser deposition | Epitaxial nickel magnetic nanodots were obtained by pulsed laser deposition (PLD) technique on Si (100) substrate using epitaxial TiN film as the template. Characterization methods include: high-resolution transmission electron microscopy (HRTEM), scanning transmission electron microscopy (STEM) Z-... | Nanodots; TiN; Nickel | 2003 |
129 |
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Bedrov, Dmitro; Smith, Grant D. | Molecular dynamics simulation study of elastic properties of HMX | Atomistic simulations were used to calculate the isothermal elastic properties for b-, a-, and d-octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine (HMX). The room-temperature isotherm for each polymorph was computed in the pressure interval 0≤p≤10.6 GPa and was used to extract the initial isot... | HMX; Elastic tensors; Isotropic moduli; Polymorphs; Isothermal compression; Lattice parameters | 2003 |
130 |
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Scarpulla, Michael | Mutual passivation of group IV donors and nitrogen in diluted GaNxAs1 x alloys | We demonstrate the mutual passivation phenomenon of Ge donors and isovalent N in highly mismatched alloy GaNxAs1-x doped with Ge. Layers of this alloy were formed by the sequential implantation of Ge and N ions followed by pulsed laser melting and rapid thermal annealing. The mutual passivation effe... | Highly mismatched alloys; Passivation; Gallium arsenide | 2003 |
131 |
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Tiwari, Ashutosh | Formation of self-assembled epitaxial nickel nanostructures | Highly orientated nickel magnetic nanoparticles were obtained by pulsed laser deposition technique on silicon (100) substrate using epitaxial titanium nitride film as the template. These nanoparticles have been characterized by conventional and high-resolution transmission electron microscopy, scann... | TiN; Nickel | 2003 |
132 |
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Scarpulla, Michael | Air shear driven flow of thin perfluoropolyether polymer films | We have studied the wind driven movement of thin perfluoropolyether (PFPE) polymer films on silicon wafers and CNx overcoats using the blow-off technique. The ease with which a liquid polymer film moves across a surface when sheared is described by a shear mobility xS , which can be interpreted both... | Perfluoropolyether; Polymer films; Air shear; Shear mobility | 2003 |
133 |
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Tiwari, Ashutosh | Growth and characterization of TaN/TiN superlattice structures | Epitaxial B1 NaCl-structured TaN(3 nm)/TiN(2 nm) superlattice structures were grown on Si(100) substrates with a TiN buffer layer, using pulsed-laser deposition. A special target assembly was used to manipulate the thickness of each layer. X-ray diffraction, transmission electron microscopy, and ... | Diffusion barriers; Copper diffusion; Tantalum nitride | 2003 |
134 |
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Tiwari, Ashutosh | Nanostructured DLC-Ag composites for biomedical applications | We have synthesized novel diamondlike carbon coatings with silver nanoparticles embedded into the DLC film. The size of silver nanoparticles that are confined into layered structures has been varied from 5 nm to 50 nm using an ingenious pulsed laser deposition technique. The size of nanoparticles wa... | Diamondlike carbon coatings; Nanocrystals | 2003 |
135 |
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Tiwari, Ashutosh | Copper diffusion characteristics in single crystal and polycrystalline TaN | TaN has become a very promising diffusion barrier material for Cu interconnections, due to the high thermal stability requirement and thickness limitation for next generation ULSI devices. TaN has a variety of phases and Cu diffusion characteristics vary with different phases and microstructures. We... | Diffusion barriers; Copper diffusion; Tantalum nitride | 2003 |
136 |
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Tiwari, Ashutosh | Rectifying electrical characteristics of La0.7Sr0.3MnO3/Zno heterostructure | We have fabricated a p - n junction, consisting of p-type manganite (La0.7Sr0.3MnO3) and n-type ZnO layers grown on sapphire substrate. This junction exhibits excellent rectifying behavior over the temperature range 20-300 K. Electrical characteristics of La0.7Sr0.3MnO3 (LSMO) film in this heterostr... | Manganites | 2003 |
137 |
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Scarpulla, Michael | Ferromagnetic Ga1-xMnxAs produced by ion implantation and pulsed-laser melting | We demonstrate the formation of ferromagnetic Ga1-xMnxAs films by Mn ion implantation into GaAs followed by pulsed-laser melting. Irradiation with a single excimer laser pulse results in the epitaxial regrowth of the implanted layer with Mn substitutional fraction up to 80% and effective Curie tempe... | Gallium arsenide; Ferromagnetic semiconductors; Remanent magnetization | 2003 |
138 |
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Scarpulla, Michael | Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs | We present a systematic investigation on the formation of the highly mismatched alloy GaNxAs1-x using N1-implantation followed by a combination of pulsed laser melting and rapid thermal annealing. Thin films of GaNxAs1-x with x as high as 0.016 and an activation efficiency of the implanted N up to 5... | Highly mismatched alloys; Gallium arsenide | 2003 |
139 |
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Smith, Grant D.; Bedrov, Dmitro; Borodin, Oleg | Quantum-chemistry-based potential for poly(ester urethane) | We have carried out extensive high-level quantum chemistry studies of the geometry, charge distribution, conformational energies, and hydrogen-bonding energies of model compounds for a family of Estane thermoplastic urethanes (TPUs). Upon the basis of these studies, we have parametrized a classical ... | Estane thermoplastic urethanes; TPU; Charge distribution; Confromational energy | 2003 |
140 |
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Liu, Feng | Metal-to-semiconductor transition in squashed armchair carbon nanotubes | We investigate electronic transport properties of the squashed armchair carbon nanotubes, using tight-binding molecular dynamics and the Green's function method. We demonstrate a metal-to-semiconductor transition while squashing the nanotubes and a general mechanism for such a transition. It is the ... | Squashed armchair; Carbon nanotubes; Metal-to-semiconductor transition; Electronic transport; Tight-binding molecular dynamics; Squashed nanotubes | 2003-04 |
141 |
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Smith, Grant D.; Bedrov, Dmitro; Borodin, Oleg | Structural relaxation and dynamic hetrogeneity in a polymer melt at attractive surfaces | Molecular dynamics simulations of polymer melts at flat and structured surfaces reveal that, for the former, slow dynamics and increased dynamic heterogeneity for an adsorbed polymer is due to densification of the polymer in a surface layer, while, for the latter, the energy topography of the sur... | Polymer melts; Structural relaxation; Dynamic heterogeneity; Attractive surfaces; Surface energy topography; Polymer densification | 2003-06 |
142 |
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Liu, Feng | Seeing the atomic orbital: first-principles study of the effect of tip termination on atomic force microscopy | We perform extensive first-principles calculations to simulate the topographical atomic-force-microscope image of an adatom on the Si(111)-(7 X 7) surface, demonstrating the feasibility of imaging not only the atoms but also the atomic orbitals. Our comparative study of tip terminations shows that ... | First-principles; Tip termination; Adatoms | 2003-06 |
143 |
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Scarpulla, Michael | Diluted II-VI oxide semiconductors with multiple band gaps | We report the realization of a new mult-band-gap semiconductor. Zn1-yMnyOxTe1-x alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of ... | Highly mismatched alloys; Zinc telluride | 2003-12 |
144 |
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Tiwari, Ashutosh | Zn0.9Co0.1O-based diluted magnetic semiconducting thin films | Here we report a systematic study of structural, optical, and magnetic measurements on epitaxial Zn0.9Co0.1O films grown on c-plane sapphire single crystal, at various temperatures (500-650°C), using pulsed-laser deposition. The main emphasis in this work has been on the correlation of microstructu... | ZnO; Cobalt | 2004 |
145 |
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Liu, Feng | Determining the adsorptive and catalytic properties of strained metal surfaces using adsorption-induced stress | We demonstrate a model for determining the adsorptive and catalytic properties of strained metal surfaces based on linear elastic theory, using first-principles calculations of CO adsorption on Au and K surfaces and CO dissociation on Ru surface. The model involves a single calculation of the adsorp... | Strained metal surfaces; Adsorption-induced stress; Adsorptive properties; Catalytic properties | 2004 |
146 |
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Tiwari, Ashutosh | Electrical transport in ZnO1-δ films: transition from band-gap insulator to Anderson localized insulator | We have thoroughly investigated the effect of oxygen nonstoichiometry on the electrical transport characteristics of ZnO1−δ films. These films were grown on optical grade quartz substrates by using a pulsed laser deposition technique. In order to alter the amount of oxygen nonstoichiometry (δ), ... | Anderson localized insulators | 2004 |
147 |
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Liu, Feng | Bending of nanoscale thin Si film induced by growth of Ge islands: hut vs. dome | We perform atomistic simulations to compute bending of freestanding nanoscale thin Si film induced by strained Ge islands. We show that a larger Ge dome island can induce smaller bending than a smaller hut island and explain the surprising experimental observation for growth of Ge islands on pattern... | Bending; Nanoscale thin Si film; Ge islands; Hut islands; Dome islands; Atomistic simulations | 2004 |
148 |
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Stringfellow, Gerald B. | Use of Nitrogen to disorder GaInP | Significant changes in microstructure, surface structure, and alloy composition have been observed in GaInP with the addition of nitrogen. These effects occur due to surface changes induced by small concentrations of nitrogen. Transmission electron microscopy and photoluminescence experiments indica... | Nitrogen; Alloys; Transmission | 2004 |
149 |
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Scarpulla, Michael | Synthesis and properties of highly mismatched II-O-I alloys | Ternary and quaternary dilute II-VI oxides were synthesised using a highly nonequilibrium method: the combination of O ion implantation and pulsed-laser melting. CdOxTe12x thin films have been produced with x up to 0.015 and with the energy gap reduced by 0.15 eV. Optical transitions corresponding t... | Highly mismatched alloys; Cadmium telluride; Zinc telluride; Anticrossing | 2004 |
150 |
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Stringfellow, Gerald B. | Nitrogen surfactant effects in GaInP | The addition of surfactant nitrogen during the growth of GaInP on 001 GaAs substrates produces significant and interesting changes in the optical and morphological properties of GaInP. In particular, multiple peaks are seen in the low temperature photoluminescence (PL) spectra of GaInP/GaInP:N he... | Surfactant nitrogen; Microscopy; Crystals | 2004 |