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Stringfellow, Gerald B. | Sb enhancement of lateral superlattice formation in GaInP | Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v)=0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by ... | Tin; Epitaxy; Photoluminescence | 2001 |
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