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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Boehme, Christoph | Spin-dependent processes at the crystalline Si-SiO2 interface at high magnetic fields | An experimental study on the nature of spin-dependent excess charge-carrier transitions at the interface between (111)-oriented phosphorous-doped ([P]) ~ 1015 cm−3) crystalline silicon and silicon dioxide at high magnetic field (B0~8.5 T) is presented. Electrically detected magnetic-resonance (E... | Silicon interfaces; Spin-dependent recombination | 2008-07 |
| 2 |
 | Boehme, Christoph | Spin-dependent recombination - an electronic readout mechanism for solid state quantum computers | It is shown that coherent spin motion of electron-hole pairs localized in band gap states of silicon can influence charge carrier recombination. Based on this effect, a readout concept for silicon based solid-state spin-quantum computers as proposed by Kane is suggested. The 31P quantum bit (qbit) i... | Spin readout; qbit; Spin-dependent recombination | 2002-10 |
| 3 |
 | Boehme, Christoph | Theory of the time-domain measurement of spin-dependent recombination with pulsed electrically detected magnetic resonance | The theoretical foundations of the time domain measurement of spin-dependent charge carrier recombination by means of pulsed electrically detected magnetic resonance (EDMR) are outlined. Pulsed EDMR is based on the transient measurement of electrical currents in semiconductors after a coherent manip... | Spin-dependent recombination | 2003-12 |
| 4 |
 | Boehme, Christoph | Light-intensity and temperature dependence of trap-dangling bond recombination in hydrogenated microcrystalline silicon | A quantitative study of the trap-dangling bond tunneling recombination in hydrogenated microcrystalline silicon (μc-Si:H) is presented. The transition coefficients were measured at various light exposures and temperatures between T= 10 K and T= 140 K using time-domain measurements of spin-dependen... | Hydrogenated microcrystalline silicon; Spin-dependent recombination | 2002 |
| 5 |
 | Boehme, Christoph | Time domain measurement of spin-dependent recombination | A defect characterization method is presented, the time domain measurement of spin-dependent recombination (TSR). Recombination between paramagnetic states is changed rapidly by electron spin resonant excitation through strong nanosecond microwave pulses. After the pulse, a slow relaxation of the re... | Spin-dependent recombination | 2001 |
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