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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Boehme, Christoph | Spin-dependent processes at the crystalline Si-SiO2 interface at high magnetic fields | An experimental study on the nature of spin-dependent excess charge-carrier transitions at the interface between (111)-oriented phosphorous-doped ([P]) ~ 1015 cm−3) crystalline silicon and silicon dioxide at high magnetic field (B0~8.5 T) is presented. Electrically detected magnetic-resonance (E... | Silicon interfaces; Spin-dependent recombination | 2008-07 |
| 2 |
 | Boehme, Christoph | Triplet recombination at Pb centers and its implications for capture cross sections | Pulsed electrically detected magnetic resonance measurements are presented showing that Pb centers at the crystalline silicon (c-Sid) (111) to silicon dioxide sSiO2d interface can cause recombination of strongly coupled spin pairs in singlet and triplet configurations. The implication of these find... | Silicon interfaces | 2005 |
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