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Filters: Collection: "ir_uspace" Subject: "Scanning capacitance microscopy"
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1 Williams, Clayton C.Lateral dopant profiling in MOS structures on a 100 nm scale using scanning capacitance microscopyScanning capacitance microscopy and atomic force microscopy have been used to image the extent of lateral dopant diffusion in MOS structures. The data are capacitance vs. voltage measurements made on a submicron scale. The technique is non-destructive when imaging uncleaved samples. New experim...Scanning capacitance microscopy; Dopant profiling1990
2 Williams, Clayton C.Lateral dopant profiling with 200 nm resolution by scanning capacitance microscopyMeasurement of dopant density in silicon with lateral resolution on the 200 nm scale has been demonstrated with a near-field capacitance technique. The technique is based upon the measurement of local capacitance between a 100 nm tip and a semiconducting surface. Lateral dopant imaging is achieved b...Dopant profile; Doping density; Scanning capacitance microscopy1989
3 Williams, Clayton C.Depth dependent carrier density profile by scanning capacitance microscopyThe depth dependent carrier density was measured on an arsenic implanted silicon sample using scanning capacitance microscopy (SCM). The capacitance versus voltage scan was performed by applying dc biases with a dither ac signal. A strong dc bias dependence was observed at the interface of an abru...Carrier density; Silicon submicrometer technology; Scanning capacitance microscopy1997
4 Williams, Clayton C.Depth dependent carrier density profile by scanning capacitance microscopyThe depth dependent carrier density was measured on an arsenic implanted silicon sample using scanning capacitance microscopy (SCM). The capacitance versus voltage scan was performed by applying dc biases with a dither ac signal. A strong dc bias dependence was observed at the interface of an abru...Carrier density; Silicon submicrometer technology; Scanning capacitance microscopy1997
5 Williams, Clayton C.Two-dimensional scanning capacitance microscopy measurements of cross-sectioned very large scale integration test structuresScanning probe technology, with its inherent two-dimensionality, offers unique capabilities for the measurement of electrical properties on a nanoscale. We have developed a setup which uses scanning capacitance microscopy (SCM) to obtain electrical information of cross-sectioned samples while simul...Oxide capacitance; Dopant profile; Scanning capacitance microscopy1996-01
6 Williams, Clayton C.Scanning capacitance microscopy on a 25 nm scaleA near-field capacitance microscope has been demonstrated on a 25 nm scale. A resonant circuit provides the means for sensing the capacitance variations between a sub-lGO-nra tip and surface with a sensitivity of 1X 10 19 F in a I kHz bandwidth. Feedback control is used to scan the tip at constant g...Scanning capacitance microscopy1989
7 Williams, Clayton C.; Huang, YufengDirect comparison of cross-sectional scanning capacitance microscope dopant profile and vertical secondary ion-mass spectroscopy profileThe scanning capacitance microscope (SCM) has been shown to be useful for quantitative 2D dopant profiling near the surface of silicon. An atomic force microscope is used to position a nanometer scale tip at a silicon surface, and local capacitance change is measured as a function of sample bias. A ...Oxide capacitance; Dopant profile; Oxide layer; Scanning capacitance microscopy1996-01
8 Williams, Clayton C.Two step dopant diffusion study performed in two dimensions by scanning capacitance microscopy and TSUPREM IVWe report the results of a two-step two- dimensional (2D) diffusion study by scanning capacitance microscopy (SCM) and 2D SUPREM IV process simulation. A quantitative 2D dopant profile of a gate-like structure is measured with the SCM on a cross-sectioned polished silicon wafer. The gate-like struct...Scanning capacitance microscopy; SCM; Doping1998
9 Williams, Clayton C.; Huang, YufengQuantitative two-dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopyQuantitative dopant profile measurements are performed on a nanometer scale by scanning capacitance microscopy (SCM). An atomic force microscope is used to position a nanometer scale tip at a semiconductor surface, and local capacitance change is measured as a function of sample bias. A new feedback...Dopant profile; Capacitance change; Scanning capacitance microscopy; Feedback control1995
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