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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Williams, Clayton C. | Scanning capacitance microscope methodology for quantitative analysis of P-N junctions | Quantification of dopant profiles in two dimensions (2D) for p-n junctions has proven to be a challenging problem. The scanning capacitance microscope (SCM) capability for p-n junction imaging has only been qualitatively demonstrated. No well-established physical model exists yet for the SCM data in... | p-n junctions; Scanning capacitance microscope; SCM | 1999 |
| 2 |
 | Williams, Clayton C. | Evidence for internal electric fields in two variant ordered GaInP obtained by scanning capacitance microscopy | Single and two variant ordered GaInP samples are studied in cross section with the scanning capacitance microscope. Our study shows significant differences in the electronic properties of single and two variant GaInP. In unintentionally doped, ordered two variant samples, both n and p-type like do... | GaInP2; Atomic ordering; Internal electric fields; Scanning capacitance microscope | 1996 |
| 3 |
 | Williams, Clayton C. | Advances in experimental technique for quantitative two dimensional dopant profiling by scanning capacitance microscopy | Several advances have been made toward the achievement of quantitative two-dimensional dopant and carrier profiling. To improve the dielectric and charge properties of the oxide-silicon interface, a method of low temperature heat treatment has been developed which produces an insulating layer with c... | Doping; Scanning capacitance microscope; SCM | 1999 |
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