TO
Filters: Collection: "ir_uspace" Subject: "SCM"
1 - 25 of 3
| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Williams, Clayton C. | Scanning capacitance microscope methodology for quantitative analysis of P-N junctions | Quantification of dopant profiles in two dimensions (2D) for p-n junctions has proven to be a challenging problem. The scanning capacitance microscope (SCM) capability for p-n junction imaging has only been qualitatively demonstrated. No well-established physical model exists yet for the SCM data in... | p-n junctions; Scanning capacitance microscope; SCM | 1999 |
| 2 |
 | Williams, Clayton C. | Advances in experimental technique for quantitative two dimensional dopant profiling by scanning capacitance microscopy | Several advances have been made toward the achievement of quantitative two-dimensional dopant and carrier profiling. To improve the dielectric and charge properties of the oxide-silicon interface, a method of low temperature heat treatment has been developed which produces an insulating layer with c... | Doping; Scanning capacitance microscope; SCM | 1999 |
| 3 |
 | Williams, Clayton C. | Two step dopant diffusion study performed in two dimensions by scanning capacitance microscopy and TSUPREM IV | We report the results of a two-step two- dimensional (2D) diffusion study by scanning capacitance microscopy (SCM) and 2D SUPREM IV process simulation. A quantitative 2D dopant profile of a gate-like structure is measured with the SCM on a cross-sectioned polished silicon wafer. The gate-like struct... | Scanning capacitance microscopy; SCM; Doping | 1998 |
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