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| Creator | Title | Description | Subject | Date | ||
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| 1 |
 | Williams, Clayton C. | Lateral dopant profiling with 200 nm resolution by scanning capacitance microscopy | Measurement of dopant density in silicon with lateral resolution on the 200 nm scale has been demonstrated with a near-field capacitance technique. The technique is based upon the measurement of local capacitance between a 100 nm tip and a semiconducting surface. Lateral dopant imaging is achieved b... | Dopant profile; Doping density; Scanning capacitance microscopy | 1989 |
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