UScholar Works
 
Filters: Collection: "ir_uspace" Subject: "Doping"
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CreatorTitleDescriptionSubjectDate
1 Stringfellow, Gerald B.Doping studies of Ga0.5In0.5P organometallic vapor-phase epitaxyPresents doping studies of gallium[sub0.5] indium[sub0.5] phosphorus organometallic vapor-phase epitaxy. Distribution coefficient of indium; Description of growth conditions; Case of poor growth morphology for gallium[sub0.5] indium[sub0.5] phosphorus.Phosphorus; Gallium; Doping1986
2 Williams, Clayton C.Advances in experimental technique for quantitative two dimensional dopant profiling by scanning capacitance microscopySeveral advances have been made toward the achievement of quantitative two-dimensional dopant and carrier profiling. To improve the dielectric and charge properties of the oxide-silicon interface, a method of low temperature heat treatment has been developed which produces an insulating layer with c...Doping; Scanning capacitance microscope; SCM1999
3 Miller, Joel Steven ; Epstein, Arthur J.Thermoelectric-power studies of (N-Methylphenazinium)x(Phenazine)1-x(Tetracyanoquinodimethanide), (0.5 <_ x <_ 1.0)Temperature-dependent thermoelectric-power (S) studies of (N-methylphenaziniurn)(x)- (phenazine) (1-x) (tetracyanoquinodimethanide) [(NMP)x(phen) (1-x)(TCNQ) 1 show that for x = 0.5, S(T) is indentical to that of (quinolinium) (TCNQ)2. S(T) for 0.5 <x < 1.0 is intermediate between that of (NMP)(TC...Semiconducting; Doping1979
4 Stringfellow, Gerald B.Photoluminescence of Shallow Acceptors in Epitaxial AlGaAsThe low-temperature (2 K) photoluminescence (PL) of AlxGa1-xAs (0<x<0.25 was studied in an effort to characterize shallow acceptors in material grown by organometallic vapor phase epitaxy and liquid phase epitaxy techniques. The dominant shallow acceptor in nominally undoped AlxGa1-xAs specimens gro...Photoluminescence; Acceptors; Doping1980
5 Williams, Clayton C.Two step dopant diffusion study performed in two dimensions by scanning capacitance microscopy and TSUPREM IVWe report the results of a two-step two- dimensional (2D) diffusion study by scanning capacitance microscopy (SCM) and 2D SUPREM IV process simulation. A quantitative 2D dopant profile of a gate-like structure is measured with the SCM on a cross-sectioned polished silicon wafer. The gate-like struct...Scanning capacitance microscopy; SCM; Doping1998
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