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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Williams, Clayton C. | Evidence of internal electric fields in GaInP2 by scanning capacitance and near-field scanning optical microscopy | GaInP2 is studied in cross section with the scanning capacitance and near-field scanning optical microscope. Our study shows significant differences in the electronic and optical properties between ordered single- and two-variant GaInP2. In single-variant samples, spatially uniform capacitance signa... | Atomic ordering; transmission electron diffraction; near-field scanning optical microscope | 1997 |
| 2 |
 | Williams, Clayton C. | Evidence for internal electric fields in two variant ordered GaInP obtained by scanning capacitance microscopy | Single and two variant ordered GaInP samples are studied in cross section with the scanning capacitance microscope. Our study shows significant differences in the electronic properties of single and two variant GaInP. In unintentionally doped, ordered two variant samples, both n and p-type like do... | GaInP2; Atomic ordering; Internal electric fields; Scanning capacitance microscope | 1996 |
| 3 |
 | Stringfellow, Gerald B. | Heterostructures in GaInP grown using a change in V/III ratio | A natural monolayer 111% superlattice -- the CuPt ordered structure -- is formed spontaneously during organometallic vapor phase epitaxial OMVPE growth of Ga0.52In0.48P. The extent of this ordering process is found to be a strong function of the input partial pressure of the phosphorus precursor dur... | Superlattices; Alloys; Atomic ordering; Heterostructures | 1997-02-24 |
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