1 - 100 of 1
| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 |
Stringfellow, Gerald B. | Influence of Sb, Bi, Tl, and B on the incorporation of N in GaAs | GaAs:N is an interesting material for many devices due to its unique compositional variation of band gap. Small amounts of N lead to a strong decrease in band gap energy as well as lattice constant. The further addition of In or Sb leads to quaternary alloys with band gap energies below 1.4 eV latti... | Antimony; Gallium Arsenide; Nitrogen | 2002 |
1 - 100 of 1