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Stringfellow, Gerald B. | Kinetics of Te doping in disordering GaInP grown by organometallic vapor phase epitaxy | Te-doped GaInP epitaxial layers were grown by organometallic vapor phase epitaxy in an effort to clarify the Te disordering mechanism. CuPt ordered GaInP is produced under normal growth conditions. The addition of Te has been reported to induce disorder. One suggested mechanism for disordering GaInP... | Crystal growth; Epitaxy; Dynamics | 2001 |
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