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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Tiwari, Ashutosh | Band-gap engineering of Zn1-xGaxO nanopowders: synthesis, structural and optical characterizations | We report the preparation and detailed structural and optical characterizations of single phase gallium doped ZnO nanopowders. A low temperature solution-based technique was developed to synthesize high-purity Zn1−xGaxO (x:0-0.05) nanopowders. Structural and optical characterization experiments we... | Zinc gallium oxide; ZnGaO; Nanopowders; Band-gap engineering | 2008 |
| 2 |
 | Scarpulla, Michael | Electrical transport and ferromagnetism in Ga1−xMnxAs synthesized by ion implantation and pulsed-laser melting | We present a detailed investigation of the magnetic and magnetotransport properties of thin films of ferromagnetic Ga1−xMnxAs synthesized using ion implantation and pulsed-laser melting (II-PLM). The field and temperature-dependent magnetization, magnetic anisotropy, temperature-dependent resist... | GaMnAs; Gallium arsenide | 2008 |
| 3 |
 | Liu, Feng | Enhanced growth instability of a strained film on wavy substrate | We demonstrate that the growth of a strained film is inherently less stable on a wavy substrate than on a flat substrate. For small surface undulation, the lowest strain energy state is for the film surface to adopt the same wavelength as the substrate surface in an antiphase configuration at the ea... | Growth instability; Strained film; Wavy substrate; Strain induced self-assembly | 2008 |
| 4 |
 | Scarpulla, Michael | Magnetic anisotropy of ferromagnetic Ga1-xMnxAs formed by Mn ion implantation and pulsed-laser melting | 2008 | ||
| 5 |
 | Scarpulla, Michael | Nonmagnetic compensation in ferromagnetic Ga1-xMnxAs and Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting | The electronic and magnetic effects of intentional compensation with nonmagnetic donors are investigated in the ferromagnetic semiconductors Ga1−xMnxAs and Ga1−xMnxP synthesized using ion implantation and pulsed-laser melting. It is demonstrated that compensation with nonmagnetic donors and MnI ... | Ferromagnetic semiconductors | 2008 |
| 6 |
 | Scarpulla, Michael | Suppression of hole-mediated ferromagnetism in Ga1-xMnxP by hydrogen | We report the passivation of the Mn acceptors in Ga1−xMnxP upon exposure to a hydrogen plasma. The as-grown films are nonmetallic and ferromagnetic with a Curie temperature of TC=55 K. After hydrogenation the sample resistivity increases by approximately three orders of magnitude at room tempera... | Ferromagnetic semiconductors; Hydrogenation | 2008 |
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