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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Tiwari, Ashutosh | Epitaxial growth and properties of MoOx(2 | We report the growth of epitaxial molybdenum oxide (MoOx,2<x<2.75) films on c plane of sapphire substrate using pulsed laser deposition in oxygen environment. The structure was characterized using x-ray diffraction, high resolution transmission electron microscopy and x-ray photoelectron spectroscop... | Epitaxy; MoO | 2005 |
| 2 |
 | Liu, Feng | Mechanical stability of ultrathin Ge/Si film on SiO2: the effect of Si/SiO2 interface | We perform two-dimensional linear elastic finite element analysis to investigate the mechanical stability of ultrathin Ge/Si film grown on or bonded to SiO2, using imperfect interface elements between Si and SiO2 to model Si/SiO2 interfacial slippage. We demonstrate that the overall composite film i... | Ultrathin films; Si/SiO2 interface; Mechanical stability | 2005 |
| 3 |
 | Vardeny, Zeev Valentine | Transport studies of isolated molecular wires in self-assembled monolayer devices | We have fabricated a variety of isolated molecule diodes based on self-assembled monolayers (SAM) of solid-state mixture (SSM) of molecular wires [1,4-methane benzene dithiol (Me-BDT)], and molecular insulator spacers [penthane 1-thiol (PT)] with different concentration ratios r of wires/spacers, wh... | Transport studies; Molecular wires; Monolayer devices | 2005 |
| 4 |
 | Boehme, Christoph | Triplet recombination at Pb centers and its implications for capture cross sections | Pulsed electrically detected magnetic resonance measurements are presented showing that Pb centers at the crystalline silicon (c-Sid) (111) to silicon dioxide sSiO2d interface can cause recombination of strongly coupled spin pairs in singlet and triplet configurations. The implication of these find... | Silicon interfaces | 2005 |
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