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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Stringfellow, Gerald B.; Rieth, Loren W. | Effects of Br and Cl on organometallic vapor phase epitaxial growth and ordering in GaInP | CuPt ordering in GaInP has significant effects on the electrical and optical properties. In fact, band gap reductions as large as 160 meV are potentially useful for devices. Thus, control of ordering is important. This has led to the investigation of surfactants that affect the surface processes d... | Band gap reductions; Surfactants; Surface processes | 2004 |
| 2 |
 | Tiwari, Ashutosh | Electrical transport in ZnO1-δ films: transition from band-gap insulator to Anderson localized insulator | We have thoroughly investigated the effect of oxygen nonstoichiometry on the electrical transport characteristics of ZnO1−δ films. These films were grown on optical grade quartz substrates by using a pulsed laser deposition technique. In order to alter the amount of oxygen nonstoichiometry (δ), ... | Anderson localized insulators | 2004 |
| 3 |
 | Williams, Clayton C. | Modeling and experimental investigation of cantilever dynamics in force detected single electron tunneling | The dynamic response of a voltage biased oscillating cantilever probe is investigated through experimental and theoretical analysis as it approaches a dielectric surface. When the tip reaches the appropriate gap single electron tunneling events are detected between the metallic tip and the surface. ... | Oscillating cantilever probe; Electron tunneling | 2004 |
| 4 |
 | Stringfellow, Gerald B. | Nitrogen surfactant effects in GaInP | The addition of surfactant nitrogen during the growth of GaInP on 001 GaAs substrates produces significant and interesting changes in the optical and morphological properties of GaInP. In particular, multiple peaks are seen in the low temperature photoluminescence (PL) spectra of GaInP/GaInP:N he... | Surfactant nitrogen; Microscopy; Crystals | 2004 |
| 5 |
 | Vardeny, Zeev Valentine | Optical studies of metallodielectric photonic crystals: bismuth and gallium infiltrated opals | We have fabricated three-dimensional metallodielectric photonic crystals that consist of bismuth and gallium metals infiltrated into porous synthetic opals that have 300 nm diam silica balls. The specular reflectivity was measured in a broad spectral range from 0.3 to 25 mm using a variety of light ... | Metallodielectric photonic crystals; Bismuth infiltrated opals; Gallium infiltrated opals; Bragg; Porous synthetic opals | 2004 |
| 6 |
 | Scarpulla, Michael | Synthesis and optical properties of II-O-VI highly mismatched alloys | We have synthesized ternary and quaternary diluted II-VI oxides using the combination of O ion implantation and pulsed laser melting. CdOxTe12x thin films with x up to 0.015, and the energy gap reduced by 150 meV were formed by O1-implantation in CdTe followed by pulsed laser melting. Quaternary Cd0... | Highly mismatched alloys; Cadmium telluride; Zinc telluride; Thermal annealing; Anticrossing; Photomodulation spectroscopy | 2004 |
| 7 |
 | Stringfellow, Gerald B. | Use of Nitrogen to disorder GaInP | Significant changes in microstructure, surface structure, and alloy composition have been observed in GaInP with the addition of nitrogen. These effects occur due to surface changes induced by small concentrations of nitrogen. Transmission electron microscopy and photoluminescence experiments indica... | Nitrogen; Alloys; Transmission | 2004 |
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