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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Stringfellow, Gerald B. | Kinetics of Te doping in disordering GaInP grown by organometallic vapor phase epitaxy | Te-doped GaInP epitaxial layers were grown by organometallic vapor phase epitaxy in an effort to clarify the Te disordering mechanism. CuPt ordered GaInP is produced under normal growth conditions. The addition of Te has been reported to induce disorder. One suggested mechanism for disordering GaInP... | Crystal growth; Epitaxy; Dynamics | 2001 |
| 2 |
 | Stringfellow, Gerald B. | Spectroscopic study of surfactant enhanced organometallic vapor phase epitaxy growth of GaInP | Samplen s of GaxIn1-xP grown by organometallic vapor phase epitaxy on (001) GaAs substrates by addition of TESb demonstrating a lateral superlattice compositional modulation (CM) have been studied by low temperature polarized photoluminescence (PL), power dependent PL, and photoluminescence excitati... | Organometallic vapor; Photoluminescence excitation; Spectroscopy | 2001 |
| 3 |
 | Lupton, John Mark | Time delayed electroluminescence overshoot in single layer polymer light-emitting diodes due to electrode luminescence quenching | We investigate the transient response of single layer polymer light-emitting diodes (LEDs) based on poly[2-methoxy, 5-(2'ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV). An electroluminescence overshoot is observed between 1 and 2 μs after turning off the voltage pulse, depending on temperature... | MEH-PPV; Delayed electroluminescence; Overshoot; Single layer; Electrode luminescence quenching; Transient responses | 2001 |
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