UScholar Works
 
Filters: Journal Title: "Applied Physics Letters" Collection: "ir_uspace"
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CreatorTitleDescriptionSubjectDate
1 Tiwari, AshutoshFerromagnetism in Cu-doped ZnO films: role of charge carriersWe report the observation of room temperature ferromagnetism in Cu-doped (5%) ZnO films grown on c-plane sapphire substrates. Films were prepared by pulsed laser deposition technique and were thoroughly characterized using several state-of-the-art characterization techniques. Hall measurements sho...Charge carriers2008
2 Liu, FengKinetics of mesa overlayer growth: climbing of adatoms onto the mesa topWe have calculated the energy barriers for an adatom climbing up onto a Pb mesa top either over a facet-facet edge or through a facet-step joint, using a modified embedded atom method. We found that the second process is not only thermodynamically more favorable than the first one but also much fast...Mesa overlayer growth; Adatoms; Epitaxial growth2008
3 Liu, FengMagnetism in nanopatterned graphite filmUsing first-principles calculations, we show that nanopatterned graphite films (NPGFs) can exhibit magnetism in analogy to graphene-based nanostructures (GBNs). In particular, graphite films with patterned nanoscale triangular holes and channels with zigzag edges all have ferromagnetic ground state...Nanopatterned graphite; Graphite films; NPGF2008
4 Liu, FengModified Timoshenko formula for bending of ultrathin strained bilayer filmsMechanical bending of nanoscale thin films can be quite different from that of macroscopic thick films. However, current understanding of mechanical bending of nanoscale thin strained bilayer films is often limited within the Timoshenko model [Timoshenko, J. Opt. Soc. Am. 11, 233 (1925)], which was ...Timoshenko formula; Bending theory; Ultrathin films; Strained nanoscale thin films; Nanofilms2008
5 Scarpulla, MichaelNear-infrared absorption and semimetal-semiconductor transition in 2 nm ErAs nanoparticles embedded in GaAs and AlAsWe report strong near-infrared absorption peaks in epitaxial films of GaAs and AlAs containing approximately 0.5-5% of the semimetal ErAs. The energy of the resonant absorption peak can be changed from 0.62 to 1.0 eV (2.2-1.4 μm) by variation of the ErAs volume fraction and the substrate temperatu...Near-infrared absorption; Semimetal-semiconductor transition; GaAs; AlAs; ErAs; Gallium arsenide; Aluminum arsenide2008
6 Liu, FengRole of vacancy on trapping interstitial O in heavily As-doped SiWe have investigated the interstitial oxygen (Oi) diffusion in heavily arsenic (As)-doped Si using first-principles calculations. We show that it is not the As per se but the Si vacancy (V) that trap Oi to reduce its diffusion. Arsenic actually plays the role of an arbitrator to activate thermal ge...Vacancy; Interstitial oxygen; As-doped Si; Arsenic doped silicon; Oxygen trapping; Oxygen diffusion2008
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