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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Scarpulla, Michael | Effect of film thickness on the incorporation of Mn interstitials in Ga1-xMnxAs | We have investigated the effect of film thickness on the distribution of Mn atoms at various lattice sites in Ga1−xMnxAs thin films. We find that the growth surface acts as a sink facilitating the outdiffusion of Mn interstitials sMnId, and thus reducing its concentration in the film. The outdiffu... | Interstitials; Gallium arsenide | 2005 |
| 2 |
 | Vardeny, Zeev Valentine | Efficiency enhancement of an organic light-emitting diode with a cathode forming two-dimensional periodic hole array | We fabricated an organic light-emitting diode using a ∏-conjugated polymer emissive layer sandwiched between two semitransparent electrodes: an optically thin gold film anode, whereas the cathode was in the form of an optically thick aluminum (Al) film with patterned periodic subwavelength two-dim... | pi-conjugated polymers; Organic light-emitting diode; OLED | 2005 |
| 3 |
 | Tiwari, Ashutosh | Epitaxial growth and properties of Zn1-xVxO diluted magnetic semiconductor thin films | Here we report systematic studies on the epitaxial growth and properties of Zn1−xVxO[x=0.001-0.2] thin films deposited onto sapphire c-plane single crystals. The thin films were deposited using pulsed laser deposition technique and were found to be epitaxial in nature. X-ray diffraction and high ... | ZnO; Vanadium | 2005 |
| 4 |
 | Williams, Clayton C. | Single-electron manipulation to and from a SiO2 surface by electrostatic force microscopy | Occupation of individual electron states near the surface of a SiO2 film is controlled by reversible single-electron tunneling to or from a metallic electrostatic force microscope probe. By switching the polarity of an applied dc bias between the probe and the sample to adjust the Fermi energy of ... | 2005 |
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