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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Stringfellow, Gerald B. | Sb enhancement of lateral superlattice formation in GaInP | Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v)=0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by ... | Tin; Epitaxy; Photoluminescence | 2001 |
| 2 |
 | Stringfellow, Gerald B.; Shurtleff, James Kevin | Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy | Recently, the addition of the isoelectronic surfactant Sb during organometallic vapor phase epitaxy (OMVPE) of GaInP was shown to eliminate ordering, resulting in a significant change in the band gap energy. These results suggest that surfactants added during growth could have profound affects on ot... | Gallium arsenide; Surfactants; Semiconductors | 2001 |
| 3 |
 | Boehme, Christoph | Time domain measurement of spin-dependent recombination | A defect characterization method is presented, the time domain measurement of spin-dependent recombination (TSR). Recombination between paramagnetic states is changed rapidly by electron spin resonant excitation through strong nanosecond microwave pulses. After the pulse, a slow relaxation of the re... | Spin-dependent recombination | 2001 |
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