|
|
Creator | Title | Description | Subject | Date |
1 |
 | Lupton, John Mark | Air-induced fluorescence bursts from single semiconductor nanocrystals | We observe a dramatic enhancement of the fluorescence intensity from single core/shell CdSe/ZnS nanocrystals upon sudden exposure to air from an evacuated surrounding. Both the number of particles contributing to emission increases as well as the average emission intensity from a single particle, le... | CdSe; ZnS; Air-induced; Fluorescence bursts | 2004 |
2 |
 | Vardeny, Zeev Valentine; Gellermann, Werner | Amplified resonant Raman scattering in conducting polymer thin films | Using picosecond pulsed laser excitation, we investigate the optical emission characteristics of poly(2,5-dioctyloxy-p-phenylenevinylene), (DOO-PPV), thin films at high excitation intensities (~1-90 MW/cm2). We observe the presence of amplified resonance Raman scattering in the emission spectra of c... | Amplified resonant Raman scattering; High excitation intensities; pi-conjugated polymers | 1998 |
3 |
 | Vardeny, Zeev Valentine | Amplified spontaneous emission and lasing in conducting polymers and fluorescent dyes in opals as photonic crystals | Spectral narrowing of photoluminescence (PL) and evolution of sharp emission lines upon optical excitation have been observed in opals made of SiO2 spheres infiltrated with conducting polymers such as OOPPV and MDDOPPV and also fluorescent dyes such as rhodamine 6G, NK-3483, and coumarin 120. Their ... | Amplified spontaneous emission; Lasing; Fluorescent dyes | 1999 |
4 |
 | Scarpulla, Michael | Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy | Among the most important properties of semiconductors are their bandgaps and how the total bandgap difference distributes between the conduction band offset ΔEC and the valence band offset ΔEV at the heterojunction (HJ) interface between two semiconductors. Understanding such properties is crucial... | Bandgaps; Band offsets; Gallium arsenide | 2009 |
5 |
 | Lupton, John Mark | Bragg scattering from periodically microstructured light emitting diodes | We present a simple method of generating a periodic wavelength scale structure in the optically active layer of a light emitting diode. This is achieved by solution deposition of a light emitting polymer on top of a corrugated substrate. The periodic structure allows waveguide modes normally trapped... | Bragg scattering; Periodic wavelength scale structure | 2000 |
6 |
 | Lupton, John Mark | Bright electroluminescence from a conjugated dendrimer | Photoluminescence and electroluminescence (EL) from a conjugated dendrimer consisting of three distyrylbenzene units linked by a central nitrogen atom as core and meta-linked biphenyl units as dendrons were investigated. The conjugated dendrimer emits green light and shows photoluminescence quantum ... | Conjugated dendrimer | 2002 |
7 |
 | Liu, Feng | Confining P diffusion in Si by an As-doped barrier layer | The miniaturization of Si-based devices requires control of doping profile, which makes the understanding of dopant interaction and diffusion in Si critical. The authors have studied the effect of As doping on P diffusion in Si using first-principles calculations. The authors found a form of As-vaca... | P diffusion; Silicon; Arsenic doping; As-doped barrier; Diffusion control | 2007 |
8 |
 | Tiwari, Ashutosh | Copper diffusion characteristics in single-crystal and polycrystalline TaN | We have investigated the diffusivity of copper in single-crystal (NaCl-structured) and polycrystalline TaN thin films grown by pulsed-laser deposition. Polycrystalline TaN films were grown directly on Si(100), while single-crystal films were grown with TiN buffer layers. Both poly- and single-crysta... | Diffusion barriers; Copper diffusion; Tantalum nitride | 2002 |
9 |
 | Tiwari, Ashutosh | CuBO2: a p-type transparent oxide | The authors report the synthesis of CuBO2, a p-type transparent oxide belonging to Cu-delafossite family. High quality thin films of CuBO2 were deposited on c-plane sapphire substrates by pulsed laser deposition technique. Detailed structural, optical, and electrical characterizations on these films... | Transparent conducting oxides; Delafossite series; CuBO2 | 2007 |
10 |
 | Vardeny, Zeev Valentine | Cylindrical micolasers and light emitting devices from conducting polymers | Substantially improved, photopumped polymer lasers are demonstrated using microrings and microdisks of various diameters D ranging from 5 to 200 mm. Various cavity-dependent laser modes were observed, which for D,10 mm were dominated by a single longitudinal mode with linewidth of less than 1 Å. Th... | Cylindrical micolasers; OLED; Photopumped polymer lasers; Microrings; Microdisks; Microlasers | 1998 |
11 |
 | Vardeny, Zeev Valentine | Directional emission from asymmetric microlaser resonators of ∏-conjugated polymers | A ∏-conjugated polymer film was fabricated into an asymmetric microlaser resonator having a quadrapole deformation with irregular boundaries and a Q factor of 600. At high excitation intensities above the threshold for lasing, we observed multimode laser emission spectra and directional emission a... | Directional emission; Asymmetric microlaser resonators; pi-conjugated polymers; DOO-PPV; poly(dioctyloxy) phenylene vinylene | 2004 |
12 |
 | Scarpulla, Michael | Effect of film thickness on the incorporation of Mn interstitials in Ga1-xMnxAs | We have investigated the effect of film thickness on the distribution of Mn atoms at various lattice sites in Ga1−xMnxAs thin films. We find that the growth surface acts as a sink facilitating the outdiffusion of Mn interstitials sMnId, and thus reducing its concentration in the film. The outdiffu... | Interstitials; Gallium arsenide | 2005 |
13 |
 | Scarpulla, Michael | Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloys | We report photomodulation spectroscopy measurements of the pressure dependence of the optical transition in Zn12yMnyOxTe1-x alloys that is associated with the lowest Ѓ conduction band (termed E2 subband). The pressure-induced energy shift of the E2 transition is nonlinear and much weaker as compare... | Highly mismatched alloys; Zinc telluride; Anticrossing | 2004 |
14 |
 | Vardeny, Zeev Valentine | Efficiency enhancement of an organic light-emitting diode with a cathode forming two-dimensional periodic hole array | We fabricated an organic light-emitting diode using a ∏-conjugated polymer emissive layer sandwiched between two semitransparent electrodes: an optically thin gold film anode, whereas the cathode was in the form of an optically thick aluminum (Al) film with patterned periodic subwavelength two-dim... | pi-conjugated polymers; Organic light-emitting diode; OLED | 2005 |
15 |
 | Lupton, John Mark | Energetic disorder limits energy transfer in semiconductor nanocrystal-DNA-dye conjugates | We demonstrate the influence of spectral linewidths of individual donor-acceptor couples on energy transfer efficiency in semiconductor nanocrystal-DNA-organic dye conjugates. Temperature-dependent single molecule and ensemble spectroscopy data are analyzed using the Förster theory within the mac... | | 2009 |
16 |
 | Scarpulla, Michael | Enhanced nitrogen incorporation by pulsed laser annealing of GaNxAs1-x formed by N ion implantation | We demonstrate that pulsed laser annealing followed by rapid thermal annealing greatly enhances incorporation of substitutional N in N1-implanted GaAs. Films implanted to 1.8% N exhibit a fundamental band gap of 1.26 eV (a band gap reduction of 160 meV), corresponding to an N activation efficiency ... | Highly mismatched alloys; Gallium arsenide | 2002 |
17 |
 | Tiwari, Ashutosh | Epitaxial growth and properties of Zn1-xVxO diluted magnetic semiconductor thin films | Here we report systematic studies on the epitaxial growth and properties of Zn1−xVxO[x=0.001-0.2] thin films deposited onto sapphire c-plane single crystals. The thin films were deposited using pulsed laser deposition technique and were found to be epitaxial in nature. X-ray diffraction and high ... | ZnO; Vanadium | 2005 |
18 |
 | Vardeny, Zeev Valentine; Raikh, Mikhail E. | Evidence for braggoriton excitations in opal photonic crystals infiltrated with highly polarizable dyes | We studied angle-dependent reflectivity spectra of opal photonic crystals infiltrated with cyanine dye aggregates, which are highly polarizable media with very large Rabi frequency. We show that, at resonance condition between the exciton-polariton of the dye aggregate and the Bragg gap, the Bragg s... | Braggoriton excitations; Opal photonic crystals; Cyanine dye aggregates; Bragg; Photonic band-gap; PBG; Polarizable dyes | 2002 |
19 |
 | Liu, Feng | Fabricating artificial nanowells with tunable size and shape by using scanning tunneling microscopy | The authors report a method of precisely fabricating the large-scale nanocrystals with well-defined shape and size. The (111) oriented Pb islands deposited on Si(111)-7x7 substrate were investigated with a manipulation technique based on scanning tunneling microscopy. By applying a series of voltage... | Artificial nanowells | 2006 |
20 |
 | Vardeny, Zeev Valentine | Femtosecond dynamics of the nonlinear optical response in polydiethynylsilane | We have measured the femtosecond dynamics of the nonlinear optical response xc3' in polydiethynylsilane ( C4H2SiBu2)x, a novel class of r-conjugated polymers incorporating Si, using degenerate four-wave mixing and photoinduced absorption techniques. In resonance conditions at 620 nm we found x (3) ... | Polydiethynylsilane; Femtosecond dynamics; Nonlinear optical response; Pi-conjugated polymers | 1991 |
21 |
 | Scarpulla, Michael | Ferromagnetic Ga1-xMnxAs produced by ion implantation and pulsed-laser melting | We demonstrate the formation of ferromagnetic Ga1-xMnxAs films by Mn ion implantation into GaAs followed by pulsed-laser melting. Irradiation with a single excimer laser pulse results in the epitaxial regrowth of the implanted layer with Mn substitutional fraction up to 80% and effective Curie tempe... | Gallium arsenide; Ferromagnetic semiconductors; Remanent magnetization | 2003 |
22 |
 | Tiwari, Ashutosh | Ferromagnetism in Co doped CeO2: observation of giant magnetic moment with a high Curie temperature | We report room temperature ferromagnetism in single crystal Ce1−xCoxO2−δ (x≤0.05) films deposited on a LaAlO3(001) substrate. Films were grown by a pulsed laser deposition technique and were thoroughly characterized using x-ray diffraction, high-resolution transmission electron microscopy cou... | CeO2; Cobalt | 2006 |
23 |
 | Tiwari, Ashutosh | Ferromagnetism in Cu-doped ZnO films: role of charge carriers | We report the observation of room temperature ferromagnetism in Cu-doped (5%) ZnO films grown on c-plane sapphire substrates. Films were prepared by pulsed laser deposition technique and were thoroughly characterized using several state-of-the-art characterization techniques. Hall measurements sho... | Charge carriers | 2008 |
24 |
 | Symko, Orest George | Formation of AlCuFe quasicrystalline thin films by solid state diffusion | We show that thin films 3000 A in thickness of the icosahedral AlCuFe phase can be formed by solid state diffusion of sputtered Al, Cu, and Fe layers. As for bulk materials, we propose that the icosahedral phase grows by diffusion of the 0.1 in the A13Fe layer previously formed by interdiffusion of... | AlCuFe; Quasicrystalline thin films; Solid state diffusion; Icosahedral phase | 1994 |
25 |
 | Lupton, John Mark | Frequency up-conversion as a temperature probe of organic opto-electronic devices | Frequency up-conversion is demonstrated in a polyfluorene-based conjugated polymer. Up-converted emission is observed upon excitation to the red of the 0-0 luminescence band. The emission intensity depends strongly on temperature and provides an accurate probe of the operating temperature of organic... | Frequency up-conversion; Organic opto-electronic devices | 2002 |