UScholar Works
 
Filters: Format: "application/pdf" Collection: "ir_uspace" Subject: "a-Si:H"
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CreatorTitleDescriptionSubjectDate
1 Vardeny, Zeev ValentineEffect of bias illumination on photoinduced absorption decay in ?-Si:HZeldov and Weiser1 proposed a model to explain the influence of optical biasing on the decay of photoinduced absorption (PA) in ?-Si:H at high temperatures observed by Pfost, Vardeny, and Tauc.2 This model differs from the model originally used2 for interpreting the experimental data at temperatures...Optical biasing; Bias illumination; Photoinduced absorption decay; a-Si:H; Amorphous silicon1985
2 Vardeny, Zeev ValentineOptical bias control of dispersive relaxations in α-Si:HRelaxation of the photoinduced ir absorption band in α-Si:H was studied in the microsecond time domain as a function of cw bias illumination. The decays follow a power law t-α where the dispersion parameter a increases with bias illumination. At low temperatures, a increases linearly with the st...Optical bias control; Dispersive relaxations; a-Si:H; Amorphous silicon1984-01
3 Vardeny, Zeev ValentineOptical bias control of dispersive relaxations in α-SI:HRelaxation of the photoinduced ir absorption band in a-Si:H was studied in the microsecond time domain as a function of cw bias illumination. The decays follow a power law t-a where the dispersion parameter a increases with bias illumination. At low temperatures, a increases linearly with the stead...Optical bias; Dispersive relaxations; Amorphous silicon; a-Si:H; Photoinduced absorption; Bias-controlled tunneling; Multiple trapping1984-01
4 Vardeny, Zeev ValentineOptical modulation spectroscopy of a-Si:H based multilayer structuresSteady state optical modulation spectrum of a-Si:H/a-SiNx:H multilayer structure, its temperature dependence and time decay have been studied. For multilayers with very thin sublayers the onset of the spectrum is more gradual and occurs at higher energy than the spectrum for unlayered a-Si:H, indic...Optical modulation spectroscopy; a-Si:H; Amorphous silicon; Dangling bonds1986
5 Vardeny, Zeev ValentineOptical studies of excess carrier recombination in α-Si:H: evidence of dispersive diffusionRelaxation of photoinduced optical absorption following pulsed laser excitation was measured between 0.5 pis and 10 ms in doped and undoped a-Si:H as a function of temperature. The recombination was found to be bimolecular diffusion limited. The diffusion coefficient of the excess carriers is time ...Hydrogenated amorphous silicon; a-Si:H; Excess carrier recombination; Dispersive diffusion1980-05
6 Vardeny, Zeev ValentinePhotocarrier dynamics in compensated hydrogenated amorphous siliconThe photocarrier dynamics in compensated a-Si:H is studied using the time-dependent photomodulation technique in the subpicosecond-to-millisecond time range. We find that photocarriers are quickly trapped in shallow impurity levels for t < 10 psec, similar to the behavior in singly doped materials...Photocarriers; a-Si:H; Amorphous silicon; Fast trapping1986-03
7 Vardeny, Zeev ValentinePhotoinduced absorption spectra in α-GeH and α-Si:HMeasurements of steady-state photoinduced absorption in α-Ge:H and α-Si:H were extended to cover the energy range from 0.25 to 1.9 eV. The subgap photoinduced-absorption bands in both materials are interpreted in terms of four kinds of optical transitions of photogenerated carriers from traps in ...Photoinduced absorption; in a-GeH; a-Si:H; Amorphous germanium; Amorphous silicon1984-07
8 Vardeny, Zeev ValentineRecombination kinetics in ?-Si:HMort et al.1 reinterpreted our data on the relaxation of photoinduced absorption (PA) in a-Si:H. 2 We want to show that the proposed interpretation contradicts one basic feature of the data while our original interpretation is in good agreement with experiment.Hydrogenated amorphous silicon; a-Si:H; Recombination kinetics; Photoinduced absorption; Decay; Relaxation1981
9 Vardeny, Zeev ValentineSpin dependent photoinduced absorption in a-Si:HWe have studied photoexcitation dynamics in undoped a-Si:H from 80 K to 300 K by the techniques of photoluminescence (PL), photoinduced absorption (PA) and their respective versions of optically detected magnetic resonance, namely PLDMR and PADMR. Both PL and PA spectra are composed of low and high ...a-Si:H; Amorphous silicon; Spin dependent; Photoinduced absorption1997
10 Vardeny, Zeev ValentineStudies of picosecond carrier dynamics in polysilane alloys: evidence for geminate recombination in small hydrogenated amorphous silicon clustersThe ultrafast photocarrier dynamics in polysilane alloys amorphous (SiH2)n' has been studied using the picosecond photoinduced absorption (PA) technique. For excitation below the optical gap, the PA response decays exponentially and is faster at low temperatures. This is interpreted in terms of e-h ...Picosecond carrier dynamics; Polysilane alloys; Geminate recombination; a-Si:H; Amorphous silicon; Ultrafast relaxation; Photoexcited carriers1990
11 Vardeny, Zeev ValentineTransient-photomodulation-spectroscopy studies of carrier thermalization and recombination in α-Si:HThe transient response of mid-gap absorption in a-Si:H to pulsed optical excitation is studied as a function of time (300 ns to 30 ms) and sample temperature (10-220 K) with use of probe wavelengths ranging from 0.75 to 5.5 fim. A numerical inversion process applied to the data gives the distributio...Amorphous silicon; a-Si:H; Transient-photomodulation-spectroscopy; Carrier thermalization; Carrier recombination; Pulsed optical excitation1988-07
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