UScholar Works
 
Filters: Format: "application/pdf" Collection: "ir_uspace" Subject: "Vapor phase epitaxy"
1 - 25 of 4
Number of results to display per page
CreatorTitleDescriptionSubjectDate
1 Stringfellow, Gerald B.Control and characterization of ordering in GaInPGae,,In,,P layers have been grown by organometallic vapor phase epitaxy on GaAs substrates with [llO]-oriented grooves on the surface that have an important effect on the formation of Cu-Pt ordered structures during growth. In this work, the groove shape is demonstrated to be critically important...Vapor phase epitaxy; Ordered structure; Cathodoluminescence spectroscopy1993-06-28
2 Stringfellow, Gerald B.Deep electron traps in organometallic vapor phase grown AlGaAsDeep electron traps have been studied by means of deep level transient spectrosocopy in type nominally undoped and interntionally te doped Al Ga As epitaxial layers which were grown by vapor phase epitaxy from organometallic compounds (OMVPE). Three main deep electron levels are present in undoped m...Vapor phase epitaxy; Shallow impurity identity; Optoelectronic device performance1980
3 Stringfellow, Gerald B.Fundamentals of vapor phase epitaxial growth processesThe first success with the growth of semiconductor materials by vapor phase epitaxy (VPE) dates back to the 1950's. Today, it is the largest volume technique for the production of both Si and HI/V electronic and photonic devices. Of course, commercial processes for the growth of Si layers, dielectri...Vapor phase epitaxy; Surfactants2007
4 Stringfellow, Gerald B.GaInAsSb metastable alloys grown by organometallic vapor phase epitaxyGa1-xlnx As1-ySby alloys have been grown by organometallic vapor phase epitaxy using trimethyl compounds of Ga, In, As, and Sb(TMGa, TMIn, TMAs, and TMSb) plus AsH3 in an atmospheric pressure, horizontal, infrared heated reactor. For the first time, alloys near the center of the region of solid immi...Organometallic; Alloys; Vapor phase epitaxy1986
1 - 25 of 4