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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Liu, Feng | Role of vacancy on trapping interstitial O in heavily As-doped Si | We have investigated the interstitial oxygen (Oi) diffusion in heavily arsenic (As)-doped Si using first-principles calculations. We show that it is not the As per se but the Si vacancy (V) that trap Oi to reduce its diffusion. Arsenic actually plays the role of an arbitrator to activate thermal ge... | Vacancy; Interstitial oxygen; As-doped Si; Arsenic doped silicon; Oxygen trapping; Oxygen diffusion | 2008 |
| 2 |
 | Liu, Feng | Suppression of spin polarization in graphene nanoribbon by edge defects and impurities | We investigate the effect of edge defects (vacancies) and impurities (substitutional dopants) on the robustness of spin polarization in graphene nanoribbons (GNRs) with zigzag edges by using density-functional-theory calculations. The stability of the spin state and its magnetic moments is found to ... | Edge defects; Vacancy; Spin-polarization; Graphene nanoribbon; GNR | 2008-04 |
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