TO
Filters: Format: "application/pdf" Collection: "ir_uspace" Subject: "Transmission electron diffraction"
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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Stringfellow, Gerald B. | Effects of substrate misorientation and growth rate on ordering in GaInP | Epitaxial layers of Ga,Tn,_,P with 1=0.52 have been grown by-organometallic vapor-phase apitaxy on GaAs substrates misoriented from the (001) plane in the [ 1 IO] direction by angles 6,) of O", 3", 6", and 9". For each substrate orientation growth rates rg of 1, 2, and 4 pm/h have been used. The ... | Transmission electron diffraction; Dark-field imaging; Photoluminescence | 1994 |
| 2 |
 | Stringfellow, Gerald B. | Effects of V/III ratio on ordering in GaInP: atomic scale mechanisms | Ga0.5In0.5P layers have been grown by organometallic vapor-phase epitaxy using various values of input V/III ratio for two phosphorus precursors, phosphine, the conventional precursor, and tertiarybutylphosphine (TBP), a newly developed, less-hazardous precursor. For growth on nominally (001) GaAs s... | Photoabsorption spectroscopy; Transmission electron diffraction; Phosphorus precursor | 1996-05-01 |
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