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 | Vardeny, Zeev Valentine | Transient-photomodulation-spectroscopy studies of carrier thermalization and recombination in α-Si:H | The transient response of mid-gap absorption in a-Si:H to pulsed optical excitation is studied as a function of time (300 ns to 30 ms) and sample temperature (10-220 K) with use of probe wavelengths ranging from 0.75 to 5.5 fim. A numerical inversion process applied to the data gives the distributio... | Amorphous silicon; a-Si:H; Transient-photomodulation-spectroscopy; Carrier thermalization; Carrier recombination; Pulsed optical excitation | 1988-07 |