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Liu, Feng | Interplay of stress, structure, and stoichiometry in Ge-covered Si(001) | By calculating the evolution of surface energies and surface stress tensors of Ge-covered Si(001) with increasing Ge coverage, we derive the most probable Ge stoichiometry in the subsurface regions beyond 1 monolayer coverage. We compare the calculated surface reconstruction and surface stress at th... | Ge-covered; Si(001); Stress; Structure; Surface stress tensors | 1996-04 |
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