UScholar Works
 
Filters: Format: "application/pdf" Collection: "ir_uspace" Subject: "Si(001)"
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CreatorTitleDescriptionSubjectDate
1 Liu, FengFirst-principles study of strain stabilization of Ge(105) facet on Si(001)Using the first-principles total energy method, we calculate surface energies, surface stresses, and their strain dependence of the Ge-covered Si (001) and (105) surfaces. The surface energy of the Si(105) surface is shown to be higher than that of Si(001), but it can be reduced by the Ge deposition...First-principles calculation; Strain stabilization; Ge(105); Si(001); Strained thin films; Epitaxial growth2005-09
2 Liu, FengHydrogen induced Si surface segregation on Ge-covered Si(001)Using Fourier transform infrared-attenuated total reflectance spectroscopy in conjunction with hydrogen adsorption to probe surface layer composition, we observe a reversible place exchange between Ge and Si on Ge-covered Si(001) when the surface is dosed with atomic H at elevated temperatures. F...Si surface segregation; Ge-covered; Si(001)1998-10
3 Liu, FengInterplay of stress, structure, and stoichiometry in Ge-covered Si(001)By calculating the evolution of surface energies and surface stress tensors of Ge-covered Si(001) with increasing Ge coverage, we derive the most probable Ge stoichiometry in the subsurface regions beyond 1 monolayer coverage. We compare the calculated surface reconstruction and surface stress at th...Ge-covered; Si(001); Stress; Structure; Surface stress tensors1996-04
4 Liu, FengModification of Si(001) substrate bonding by adsorbed Ge or Si dimer islandsHigh-resolution scanning tunneling microscopy studies of the Si(100)-(2 X 1) surface show a heretofore unrecognized distortion of the substrate structure when islands form during the initial stage of growth of either Si or Ge. The distortion, reflecting the influence of strain, extends at least thre...Si(001); Adsorbed Ge; Adsorbed Si; Dimer islands; Substrate bonding; Distortion1998-09
5 Liu, FengPattern formation on silicon-on-insulatorThe strain driven self-assembly of faceted Ge nanocrystals during epitaxy on Si(001) to form quantum dots (QDs) is by now well known. We have also recently provided an understanding of the thermodynamic driving force for directed assembly of QDs on bulk Si (extendable to other QD systems) based on ...Pattern formation; Silicon-on-insulator; Strain driven; Faceted Ge nanocrystals; Si(001); Directed assembly2005
6 Liu, FengSurface stress-induced island shape transition in Si(001) homoepitaxyA low-energy electron microscopy study of two-dimensional Si(001) island shapes near thermal equilibrium on 10315 mm2 large single-domain terraces reveals a continuous increase of island aspect ratio and a shape transition from elliptical to ‘‘American-football''-like with increasing island size...Si(001); Homoepitaxy; Island shape transition; Single-domain terraces2001-11
7 Liu, FengTowards quantitative understanding of formation and stability of Ge hut islands on Si(001)We analyze Ge hut island formation on Si(001), using first-principles calculations of energies, stresses, and their strain dependence of Ge/Si(105) and Ge/Si(001) surfaces combined with continuum modeling. We give a quantitative assessment on strain stabilization of Ge(105) facets, estimate the cr...Ge hut islands; Si(001); First-principles calculations; Heteroepitaxial growth2005-05
8 Liu, FengUnique dynamic appearance of a Ge-Si Ad-dimer on Si(001)We carry out a comparative study of the energetics and dynamics of Si-Si, Ge-Ge, and Ge-Si ad-dimers on top of a dimer row in the Si(001) surface, using first-principles calculations. The dynamic appearance of a Ge-Si dimer is distinctively different from that of a Si-Si or Ge-Ge dimer, providing a ...Ge-Si Ad-dimer; Si(001); First-principles calculations; Energetics2000-12
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