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![]() | Stringfellow, Gerald B. | Effects of V/III ratio on ordering in GaInP: atomic scale mechanisms | Ga0.5In0.5P layers have been grown by organometallic vapor-phase epitaxy using various values of input V/III ratio for two phosphorus precursors, phosphine, the conventional precursor, and tertiarybutylphosphine (TBP), a newly developed, less-hazardous precursor. For growth on nominally (001) GaAs s... | Photoabsorption spectroscopy; Transmission electron diffraction; Phosphorus precursor | 1996-05-01 |