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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Liu, Feng | First-principles calculation of interaction between interstitial O and As dopant in heavily As-doped Si | We investigate the interaction between interstitial oxygen (Oi) and As dopant in heavily As-doped Si using first-principles total-energy calculations. The interaction between Oi and As (substitutional) is found to be short ranged. The most stable configuration is with As and Oi as second nearest nei... | First-principles calculation; Interstitial oxygen; As dopant; As-doped Si; Oxygen diffusion; Oi | 2007 |
| 2 |
 | Liu, Feng | Role of vacancy on trapping interstitial O in heavily As-doped Si | We have investigated the interstitial oxygen (Oi) diffusion in heavily arsenic (As)-doped Si using first-principles calculations. We show that it is not the As per se but the Si vacancy (V) that trap Oi to reduce its diffusion. Arsenic actually plays the role of an arbitrator to activate thermal ge... | Vacancy; Interstitial oxygen; As-doped Si; Arsenic doped silicon; Oxygen trapping; Oxygen diffusion | 2008 |
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