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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Williams, Clayton C.; Huang, Yufeng | Direct comparison of cross-sectional scanning capacitance microscope dopant profile and vertical secondary ion-mass spectroscopy profile | The scanning capacitance microscope (SCM) has been shown to be useful for quantitative 2D dopant profiling near the surface of silicon. An atomic force microscope is used to position a nanometer scale tip at a silicon surface, and local capacitance change is measured as a function of sample bias. A ... | Oxide capacitance; Dopant profile; Oxide layer; Scanning capacitance microscopy | 1996-01 |
| 2 |
 | Williams, Clayton C. | Direct imaging of SiO2 thickness variation on Si using modified atomic force microscope | Fabrication techniques of metal-oxide-semiconductor ~(MOS) transistors have been improved very rapidly during the last several decades. With this trend, scaling down of MOS transistors is necessary to improve the speed of circuits and the packing density of discrete devices. Both lateral and vertic... | Silicon dioxide; Oxide layer; Phosphorus ions; Oxide capacitance; Dopant profile | 1996-03-01 |
| 3 |
 | Williams, Clayton C. | Two-dimensional scanning capacitance microscopy measurements of cross-sectioned very large scale integration test structures | Scanning probe technology, with its inherent two-dimensionality, offers unique capabilities for the measurement of electrical properties on a nanoscale. We have developed a setup which uses scanning capacitance microscopy (SCM) to obtain electrical information of cross-sectioned samples while simul... | Oxide capacitance; Dopant profile; Scanning capacitance microscopy | 1996-01 |
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