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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Tiwari, Ashutosh | Growth of epitaxial NdNiO3 and integration with Si(100) | We have grown epitaxial NdNiO3 films on Si(100) substrate under ambient oxygen pressure using a pulsed-laser deposition method. The integration of NdNiO3 with Si(100) was accomplished by lattice-matching epitaxy of MgO and SrTiO3 and domain matching epitaxy of TiN on Si(100). During domain matching... | NdNiO3; SrTiO3; Silicon substrate | 2002 |
| 2 |
 | Tiwari, Ashutosh | Stress-induced tuning of metal-insulator transition in NdNiO3 films | We have used the lattice-mismatch epitaxial strain, induced by the constraint of epitaxy, to tune the metal-insulator (M- I) transition temperature of NdNiO3 films grown on Si(100) substrate. Films were integrated with the Si(100) substrate using several combinations of thin buffer layers. A system... | NdNiO3; Silicon substrate; Tantalum nitride; Buffer layers; Biaxial strain | 2002 |
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