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 | Stringfellow, Gerald B.; Sadwick, Laurence P. | Chemical beam epitaxial growth of InP and GaP by using tertiarybutylbis (dimethylamino) phosphine | We report the growth of indium phosphide (InP) by using a chemical beam epitaxy (CBE) technique with the group V source tertiarybutylbis (dimethylamino) phosphine (TBBDMAP). The photoluminescence spectra at 15 K showed that the intensity of a peak attributed to impurity recombination and the FWHM i... | Chemical beam epitaxy; CBE; InP; GaP; Tertiarybutylbis (Dimethylamino) Phosphine; Gallium phosphide; TBBDMAP | 2007 |
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