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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Stringfellow, Gerald B.;Inglefield, Colin E.;Taylor, P. Craig | Characterization of unicompositional GaInP2 ordering heterostructures grown by variation of V/III ratio | Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies are employed to investigate single heterostructures based on two GaInP2 layers that have the same composition but different degrees of order on the cation sublattice. Four sample configurations are studied: two complemen... | Heterostructures; Growth parameters; Growth temperature | 1997 |
| 2 |
 | Stringfellow, Gerald B. | Effects of V/III ratio on ordering and antiphase boundaries in GaInP layers | Transmission electron microscope (TEM) and transmission electron diffraction (TED) studies have been performed to investigate the effects of V/III ratio on ordering and antiphase boundaries (APBs) in organometallic vapor phase epitaxial Ga0.5In0.5P layers grown onto (001) GaAs vicinal substrates ... | Antiphase boundaries; APB; Heterostructures; Organometallics | 1997 |
| 3 |
 | Stringfellow, Gerald B.; Shurtleff, James Kevin | Heterostructures in GaInP grown using a change in Te doping | In organometallic vapor phase epitaxy, changes in growth conditions can be used to modulate the extent of CuPt ordering and, hence, the band gap energy of GaInP. One method is to add Te during growth. An increase in the band gap energy of 0.1 eV due to a decrease in ordering has been obtained by ... | Heterostructures; Alloys | 2000 |
| 4 |
 | Stringfellow, Gerald B. | Heterostructures in GaInP grown using a change in V/III ratio | A natural monolayer 111% superlattice -- the CuPt ordered structure -- is formed spontaneously during organometallic vapor phase epitaxial OMVPE growth of Ga0.52In0.48P. The extent of this ordering process is found to be a strong function of the input partial pressure of the phosphorus precursor dur... | Superlattices; Alloys; Atomic ordering; Heterostructures | 1997-02-24 |
| 5 |
 | Stringfellow, Gerald B. | Te doping of GaInP: ordering and step structure | The donor Te has been added to GaInP during organometallic vapor phase epitaxial growth using the precursor diethyltelluride. In agreement with previous studies, the addition of high Te concentrations leads to the elimination of the CuPt ordering observed in undoped layers. The degree of order is es... | Epitaxial growth; Heterostructures; Growth parameters | 1999-04-01 |
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