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| Creator | Title | Description | Subject | Date | ||
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 | Liu, Feng | First-principles study of strain stabilization of Ge(105) facet on Si(001) | Using the first-principles total energy method, we calculate surface energies, surface stresses, and their strain dependence of the Ge-covered Si (001) and (105) surfaces. The surface energy of the Si(105) surface is shown to be higher than that of Si(001), but it can be reduced by the Ge deposition... | First-principles calculation; Strain stabilization; Ge(105); Si(001); Strained thin films; Epitaxial growth | 2005-09 |
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