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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Stringfellow, Gerald B.; Sadwick, Laurence P. | Chemical beam epitaxial growth of InP and GaP by using tertiarybutylbis (dimethylamino) phosphine | We report the growth of indium phosphide (InP) by using a chemical beam epitaxy (CBE) technique with the group V source tertiarybutylbis (dimethylamino) phosphine (TBBDMAP). The photoluminescence spectra at 15 K showed that the intensity of a peak attributed to impurity recombination and the FWHM i... | Chemical beam epitaxy; CBE; InP; GaP; Tertiarybutylbis (Dimethylamino) Phosphine; Gallium phosphide; TBBDMAP | 2007 |
| 2 |
 | Stringfellow, Gerald B. | Effects of low surfactant Sb coverage on Zn and C incorporation in GaP | The use of surfactants during the vapor phase growth of III-V materials to control fundamental characteristics of epitaxial layers is becoming increasingly important. We have investigated the remarkable effects of Sb, from triethylantimony (TESb) Pyrolysis, on the Zn doping during the organometallic... | Surfactants; Organometallic vapor phase epitaxy; Gallium phosphide | 2007 |
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