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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Stringfellow, Gerald B. | Kinetically controlled order/disorder structure in GaInP | A Ga0.52In0.58p order/disorder heterostructure having a band-gap energy difference exceeding 160 meV has been grown by organometallic vapor phase epitaxy. The two layers were grown on a nominally (OOl)-oriented GaAs substrate misoriented by 3° toward the [110] direction in the lattice. The disorder... | Indium phosphides; Gallium Phosphides; Heterojunctions | 1994 |
| 2 |
 | Stringfellow, Gerald B.; Williams, Clayton C. | Spatial mapping of ordered and disordered domains of GaInP by near-field scanning optical microscopy and scanning capacitance microscopy | Imaging of topography, locally induced photoluminescence and Fermi-level pinning in adjacent ordered and disordered domains on a cleaved GaInP sample is performed using a near-field scanning optical microscope and scanning capacitance microscope at room temperature in air. Highly localized photolumi... | Gallium Phosphides; Surface Structure; Photoluminescence | 1996-04-13 |
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