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| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Stringfellow, Gerald B. | Influence of Sb, Bi, Tl, and B on the incorporation of N in GaAs | GaAs:N is an interesting material for many devices due to its unique compositional variation of band gap. Small amounts of N lead to a strong decrease in band gap energy as well as lattice constant. The further addition of In or Sb leads to quaternary alloys with band gap energies below 1.4 eV latti... | Antimony; Gallium Arsenide; Nitrogen | 2002 |
| 2 |
 | Scarpulla, Michael | Magnetic cluster phases of Mn-interstitial-free (Ga,Mn)As | We report an investigation of magnetic cluster phases of (Ga,Mn)As of varying dosages formed by Mn ion implantation followed by pulsed-laser melting (II-PLM). A systematic study of zero-field-cooled and field-cooled magnetization along several high-symmetry crystallographic directions reveals the ... | Magnetic cluster phases; Gallium Arsenide; Ferromagnetic semiconductors; Interstitials | 2007 |
| 3 |
 | Scarpulla, Michael | Mn L3,2 x-ray absorption and magnetic circular dichroism in ferromagnetic Ga1-xMnxP | We have measured the x-ray absorption and x-ray magnetic circular dichroism (XMCD) at the Mn L3,2 edges in ferromagnetic Ga1−xMnxP films for 0.018≤x≤0.042. Large XMCD asymmetries at the L3 edge indicate significant spin polarization of the density of states at the Fermi energy. The temperatur... | X-ray absorption; Gallium Arsenide; Ferromagnetic semiconductors | 2006 |
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