TO
1 - 25 of 2
| Creator | Title | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |
 | Liu, Feng | First-principles calculation of interaction between interstitial O and As dopant in heavily As-doped Si | We investigate the interaction between interstitial oxygen (Oi) and As dopant in heavily As-doped Si using first-principles total-energy calculations. The interaction between Oi and As (substitutional) is found to be short ranged. The most stable configuration is with As and Oi as second nearest nei... | First-principles calculation; Interstitial oxygen; As dopant; As-doped Si; Oxygen diffusion; Oi | 2007 |
| 2 |
 | Liu, Feng | First-principles study of strain stabilization of Ge(105) facet on Si(001) | Using the first-principles total energy method, we calculate surface energies, surface stresses, and their strain dependence of the Ge-covered Si (001) and (105) surfaces. The surface energy of the Si(105) surface is shown to be higher than that of Si(001), but it can be reduced by the Ge deposition... | First-principles calculation; Strain stabilization; Ge(105); Si(001); Strained thin films; Epitaxial growth | 2005-09 |
1 - 25 of 2